NE3521M04-T2-A

NE3521M04-T2-A

$0.18
  • Description:RF MOSFET GAAS HJ-FET 2V
  • Series:-

SKU:9b5658a52757 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET GAAS HJ-FET 2V
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Technology:GaAs HJ-FET
  • Frequency:20GHz
  • Gain:11dB
  • Voltage - Test:2 V
  • Current Rating (Amps):70mA
  • Noise Figure:0.85dB
  • Current - Test:6 mA
  • Power - Output:-
  • Voltage - Rated:4 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:4-SMD, Flat Leads
  • Supplier Device Package:-
  • Configuration:N-Channel

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NE3521M04-T2-A

Overview

The NE3521M04-T2-A is an RF small signal field-effect transistor manufactured by Renesas Electronics. It is a single-element, N-channel hetero-junction FET designed for S-band applications. The device operates in depletion mode and features a lead-free Super Minimold M04 package with four pins. The drain is connected to the case, and the component is constructed using silicon technology within a plastic/epoxy rectangular body.

Feature Summary

  • Hetero-junction FET technology optimized for RF performance
  • Depletion mode operation suitable for low-noise amplification
  • Lead-free construction compliant with environmental standards

Applications

  • S-band low noise amplifier circuits
  • RF signal processing stages
  • Communication system front-ends

Procurement Notes

Verify the current lifecycle status directly with Renesas Electronics or authorized distributors before procurement planning. Confirm that the specific M04 package variant matches the design requirements. Ensure compliance with RoHS directives as indicated by the lead-free designation. Check for any pending product change notices that may affect specifications or availability.

Selection Notes

Select this component for designs requiring S-band RF performance with a compact surface-mount footprint. Verify that the depletion mode characteristic aligns with the biasing strategy of the target circuit. Ensure the thermal management capabilities of the Super Minimold package are sufficient for the intended power dissipation levels in the application environment.

Part Context

This part belongs to the Renesas NE series of RF transistors, which are widely used in microwave and radio frequency applications. The M04 package provides a standardized form factor for high-frequency circuit layouts. The NE3521 variant specifically targets S-band frequencies, distinguishing it from other models in the family designed for different frequency ranges.

Replacement Considerations

Consult official Renesas documentation for qualified substitute part numbers. Cross-reference pinouts and electrical characteristics carefully when considering alternatives from other manufacturers to ensure compatibility with existing S-band circuit designs.

NE3521M04-T2-ANE3521M04-T2-A
$0.18
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