NE4210S01

Overview

The NE4210S01 is a super low noise heterojunction field-effect transistor (HJ FET) manufactured by California Eastern Laboratories. It is designed for high-frequency applications, operating effectively up to 12 GHz. The component utilizes a hollow plastic package to minimize parasitic effects and enhance thermal performance. Key electrical characteristics include a peak oscillation frequency of 12 GHz and a minimum noise figure of 0.5 dB at 8 GHz with Vds=3V and Ids=10mA. It features a gain of 12 dB at 8 GHz under the same bias conditions.

Feature Summary

• Super low noise performance optimized for sensitive RF front-end stages
• Heterojunction technology providing high electron mobility and stability
• Hollow plastic package design for reduced parasitic inductance and capacitance

Applications

• Low noise amplifier (LNA) designs in wireless communication systems
• Satellite communication receiver front-ends
• Microwave measurement equipment signal conditioning

Procurement Notes

Verify the specific datasheet revision and pinout configuration before integration, as packaging variants may exist within the CEL product line. Confirm that the hollow plastic package handling requirements align with your surface mount assembly processes. Ensure that the 12 GHz operational limits are not exceeded in your final circuit design to maintain specified noise figures and gain stability.

Selection Notes

Select this component when ultra-low noise figures are critical at microwave frequencies around 8 to 12 GHz. The HJ FET technology offers superior noise performance compared to standard GaAs MESFETs. Consider the hollow plastic package constraints regarding mechanical robustness and thermal dissipation capabilities relative to your system's environmental conditions and power budget.

Part Context

California Eastern Laboratories specializes in advanced RF and microwave components. The NE4210S01 belongs to their series of super low noise HJ FETs, engineered for high-performance applications where signal integrity and minimal noise addition are paramount. This device represents the company's expertise in heterojunction semiconductor technologies for high-frequency electronics.

Replacement Considerations

The ATF-10100, ATF-10136, and ATF-10236 from Agilent (Hewlett-Packard) are listed as similar parts. These alternatives also operate in the 0.5-12 GHz range as low noise GaAs FETs. Verify pin compatibility and specific noise/gain parameters against the NE4210S01 datasheet before substitution.