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The NE552R679A-A is an obsolete RF MOSFET transistor manufactured by CEL, designed for low and medium power applications in the L&S band. It utilizes Silicon LDMS technology and features an N-Channel configuration within a 79A package. Key electrical specifications include a drain-source breakdown voltage of 18 V, a continuous drain current of 230 mA, and a maximum power dissipation of 3 W. The device operates at a frequency of 460 MHz, delivering an output power of 28 dBm with a gain of 20 dB under a 3 V test condition.
This component is officially listed as obsolete by the manufacturer. Availability is restricted, and sourcing may require verification through authorized distributors or secondary markets. Buyers should confirm the specific revision suffix and verify RoHS compliance status before procurement to ensure compatibility with current manufacturing standards.
Engineers selecting this part must account for its obsolete status and limited supply chain availability. The 79A package requires appropriate SMD/SMT layout considerations. Designers should evaluate the 18 V breakdown voltage and 3 W power dissipation limits against their specific thermal and electrical requirements to ensure reliable operation within the specified temperature range.
The NE552R679A-A belongs to CEL's portfolio of RF MOSFET transistors, specifically tailored for L&S band applications. It shares the 79A package format with other devices in the series but is distinguished by its 460 MHz frequency rating and 28 dBm output power capabilities. This model represents a specialized solution for medium-power RF amplification tasks.
Publicly confirmed substitute part numbers are not available for this obsolete component. Engineers should consult official replacement guides or contact the manufacturer directly for validated alternatives that match the required electrical and mechanical specifications.