SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NE552R679A-T1A-A is an RF MOSFET transistor manufactured by CEL, utilizing Silicon LDMOS technology. It operates at a frequency of 460 MHz with a gain of 20 dB and an output power of 28 dBm. The device features a continuous drain current of 350 mA and a maximum power dissipation of 3 W. It is housed in a 79A package (4-SMD, flat leads) designed for surface mount installation. The component supports a maximum operating temperature of +125°C and has a threshold voltage of 1.4 V.
Verify the obsolete status and limited availability before design finalization. Confirm that the 79A package dimensions match the target PCB footprint. Ensure thermal management solutions accommodate the specified power dissipation limits. Check for RoHS compliance documentation if required by regional regulations. Validate supply chain sources due to potential discontinuation risks.
Select this component for applications requiring operation around 460 MHz with moderate output power. Compare performance metrics against alternative LDMOS devices in the same frequency range. Consider the 79A package constraints during layout planning. Evaluate thermal resistance requirements based on the 3 W dissipation rating. Verify compatibility with existing biasing networks for the specified gate-source voltage thresholds.
This part belongs to the NE552 series of RF MOSFET transistors from CEL, specifically tailored for medium-power applications in the low-frequency band. The series typically includes variants optimized for different frequency ranges and power levels within the cellular spectrum. The 79A package is a standard form factor for these types of RF power devices, facilitating integration into compact wireless modules.
Public confirmed substitute part numbers are not available.