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The NE55410GR-AZ is a Radio Frequency Power LD-MOSFET manufactured by CEL. It operates at a test frequency of 2.1 GHz with a supply voltage of 28 V and quiescent current of 120 mA. The device delivers a typical output power of +40.4 dBm and linear gain of 25 dB at an input power of +16 dBm. It is housed in a GR Plastic SMD package.
Verify the specific suffix 'AZ' against official manufacturer documentation to confirm any distinct handling or environmental specifications, as standard datasheets may only list the base part number NE55410GR. Ensure sourcing channels provide traceability to California Eastern Laboratories (CEL) to guarantee component authenticity and compliance with technical standards.
Select this component for applications requiring high output power and linearity at 2.1 GHz. The 28 V supply requirement dictates biasing circuit design. Consider the GR plastic package dimensions for PCB layout constraints. Evaluate thermal management needs based on the specified operating conditions and power dissipation characteristics inherent to LD-MOSFET technology.
California Eastern Laboratories (CEL) specializes in RF semiconductors, including power amplifiers and switches. The NE55410GR-AZ belongs to their portfolio of silicon RF devices designed for wireless connectivity markets. This product line supports designers in developing reliable RF front-end solutions for various communication protocols.
Consult official CEL documentation for confirmed substitute part numbers. Cross-referencing requires matching electrical parameters such as output power, gain, and supply voltage.