NE5550234-AZ

NE5550234-AZ

  • Description:RF MOSFET 7.5V 3MINIMOLD
  • Series:-

SKU:3458337fbbe8 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET 7.5V 3MINIMOLD
  • Series:-
  • Mfr:CEL
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Frequency:900MHz
  • Gain:23.5dB
  • Voltage - Test:7.5 V
  • Current Rating (Amps):600mA
  • Noise Figure:-
  • Current - Test:40 mA
  • Power - Output:32.2dB
  • Voltage - Rated:30 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:TO-243AA
  • Supplier Device Package:3-PowerMiniMold
  • Configuration:N-Channel

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NE5550234-AZ

Overview

The NE5550234-AZ is a silicon power MOSFET designed for VHF to UHF-Band Class-AB power amplifier applications. It features high output power, high power added efficiency, and high linear gain. The device operates with a drain-to-source voltage of up to 30V and a continuous drain current of 0.6A. At 460 MHz with VDS = 7.5V and IDset = 40mA, it delivers a typical output power of 33.0 dBm and a power added efficiency of 68%. Linear gain is typically 23.5 dB at the same conditions. The component is housed in a 3-pin Power MiniMold package.

Feature Summary

  • High output power capability suitable for RF amplification
  • High power added efficiency for improved energy utilization
  • High linear gain for signal fidelity
  • Robust ESD tolerance

Applications

  • 150 MHz Band Radio System
  • 460 MHz Band Radio System
  • 900 MHz Band Radio System

Procurement Notes

Verify the specific ordering suffix when sourcing components. The datasheet indicates that the standard supply form is embossed taping, while sample orders utilize the -AZ suffix. Confirm the exact part number required for your manufacturing process against the manufacturer's official ordering information to ensure correct packaging and availability status.

Selection Notes

Select this component for designs requiring Class-AB operation in the VHF to UHF frequency bands. Ensure the circuit design accommodates the recommended operating range of 7.5V to 9.0V for VDS. Consider the thermal resistance characteristics and the need for appropriate heat dissipation given the total power dissipation rating. Verify impedance matching networks align with the specified test frequencies for optimal performance.

Part Context

This silicon power MOSFET belongs to the NE5550 series developed by California Eastern Laboratories (CEL), now a partner of Renesas Electronics. The series targets radio communication systems operating across various VHF and UHF bands. The device integrates high-performance RF capabilities within a compact surface-mount package, facilitating integration into portable and base station equipment.

Replacement Considerations

Consult the manufacturer's documentation for direct substitutes. Cross-referencing with other NE5550 series variants may provide options with different pinouts or electrical characteristics. Verify compatibility regarding package dimensions and thermal requirements before implementing any alternative component.

NE5550234-AZNE5550234-AZ

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