NE5550779A-T1-A

Overview

The NE5550779A-T1-A is an RF LDMOS power transistor manufactured by CEL. It operates at a frequency of 900 MHz with a rated voltage of 30 V and a test voltage of 7.5 V. The device delivers an output power of 38.5 dBm, achieving a gain of 22 dB and a Power Added Efficiency (PAE) of 66%. It features a 4-SMD flat lead package (79A) and draws a test current of 140 mA.

Feature Summary

• Utilizes LDMOS technology for high-efficiency RF power amplification
• Designed for operation in the 900 MHz frequency band
• Provides high output power capability within a compact surface-mount footprint

Applications

• Base station power amplification
• Wireless communication infrastructure
• RF signal generation circuits

Procurement Notes

This component is officially listed as obsolete by the manufacturer. Availability is restricted, and sourcing may require verification of existing stock or secondary market channels. Engineers should confirm end-of-life status and transition plans before finalizing designs involving this specific part number.

Selection Notes

Select this component for applications requiring high efficiency and gain at 900 MHz. Verify that the system design accommodates the 30 V rating and 7.5 V operating bias. Consider the 4-SMD flat lead package constraints for thermal management and PCB layout requirements during the selection process.

Part Context

The NE5550779A-T1-A belongs to the NE5550 series of RF MOSFET transistors from CEL. This series includes various models optimized for different frequency bands and power levels, such as the NE5550979A and NE5550279A variants, all sharing similar packaging and technological foundations.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, alternative components must be identified through independent engineering analysis of electrical specifications and pin compatibility.