NE5550979A-A

Overview

The NE5550979A-A is an RF MOSFET transistor manufactured by CEL. It is a silicon N-Channel device designed for radio frequency applications, specifically operating at 915 MHz. The component features a maximum drain-source breakdown voltage of 15 V and supports a continuous drain current of 1.5 A. It provides a gain of 16 dB with a minimum forward transconductance of 2.5 S. The power dissipation capability is rated at 20 W. The device operates within a temperature range of -65 °C to +125 °C and utilizes a 79A-4 surface-mount package.

Feature Summary

• N-Channel silicon construction optimized for RF power amplification
• High gain performance suitable for 915 MHz band operations
• Robust thermal handling with 20 W power dissipation rating
• Extended operational temperature range for harsh environments

Applications

• RF power amplification in industrial, scientific, and medical (ISM) equipment
• Wireless communication systems operating in the 915 MHz band
• L&S Band LD-MOSFET applications requiring high linearity

Procurement Notes

Verify the specific suffix 'A' against the manufacturer's official documentation to confirm exact electrical tolerances and pinout configuration. Ensure the 79A-4 package footprint matches the target PCB design. Confirm RoHS compliance status through the latest datasheet revision, as manufacturing processes may vary. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.

Selection Notes

Select this component when designing circuits requiring stable RF performance at 915 MHz with moderate power output. The 15 V breakdown voltage suits low-voltage supply architectures. Consider the 79A-4 package constraints for thermal management solutions. Evaluate the 1.5 A current limit against peak load requirements. Compare the 16 dB gain specification against alternative devices to ensure signal amplification meets system specifications without excessive noise.

Part Context

This part belongs to the family of RF MOSFET transistors produced by CEL. These components are engineered for linear and switching applications in the radio frequency spectrum. The NE555 series designation typically indicates specific RF characteristics tailored for wireless transmission modules. The device represents a discrete semiconductor solution for integrating RF stages into compact electronic assemblies.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.