NE5550979A-T1-A

Overview

The NE5550979A-T1-A is an RF MOSFET transistor manufactured by CEL. It is a silicon N-Channel device designed for radio frequency applications, specifically operating at 915 MHz. The component features a maximum drain-source breakdown voltage of 15 V and a continuous drain current of 1.5 A. It provides a gain of 16 dB with a minimum forward transconductance of 2.5 S. The power dissipation capability is 20 W, and it operates within a temperature range of -65 C to +125 C. The device utilizes a 79A-4 surface-mount package.

Feature Summary

• Designed for high-frequency RF applications at 915 MHz
• N-Channel silicon construction for robust performance
• Capable of handling 20 W power dissipation
• Surface-mount compatible packaging

Applications

• RF power amplification circuits
• Wireless communication systems operating in the 915 MHz band
• Industrial, scientific, and medical (ISM) radio equipment

Procurement Notes

Verify the specific suffix T1-A against the manufacturer's official datasheet to confirm pinout and electrical characteristics match your design requirements. Ensure the 79A-4 package footprint aligns with your PCB layout. Confirm RoHS compliance status through the latest documentation from CEL before finalizing procurement.

Selection Notes

Select this component when designing for 915 MHz RF applications requiring moderate power output. The 15 V breakdown voltage and 1.5 A current rating suit low-to-medium power RF stages. Consider the 20 W dissipation rating for thermal management solutions. Verify compatibility with existing gate drive voltages given the specified Vgs parameters.

Part Context

This part belongs to the CEL RF MOSFET portfolio, targeting wireless infrastructure and ISM band devices. It serves as a discrete solution for RF power stages where integrated modules are not preferred. The 79A-4 package allows for compact board designs while maintaining necessary thermal performance for continuous operation in industrial environments.

Replacement Considerations

Publicly confirmed substitute part numbers for NE5550979A-T1-A were not identified in available documentation. Cross-reference with other CEL RF MOSFETs in the same frequency band if direct substitution is required.