NE650103M-A

Description：RF MOSFET 10V 3M
Series：-

SKU:d47815ec8fe5 Category: RF FETs, MOSFETs Brand: CEL

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Product introduction

Product Detailed Parameters

Description：RF MOSFET 10V 3M
Series：-
Mfr：CEL
Package：Tray
Technology：MOSFET (Metal Oxide)
Frequency：2.3GHz
Gain：11dB
Voltage - Test：10 V
Current Rating (Amps)：5A
Noise Figure：-
Current - Test：1.5 A
Power - Output：40dBm
Voltage - Rated：15 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：SOT-445 Variant
Supplier Device Package：3M
Configuration：-

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NE650103M-A

Overview

The NE650103M-A is a Gallium Arsenide (GaAs) MESFET designed for L-band and S-band applications. It operates with a maximum drain-source voltage of 15V and supports frequencies up to 2.7GHz, with specific characterization at 2.3GHz. The device features a 3-micron gate length technology. It is housed in a compact SOT-445 surface-mount package, facilitating integration into RF circuits requiring high-frequency performance and low noise characteristics typical of GaAs MESFETs.

Feature Summary

Utilizes Gallium Arsenide (GaAs) MESFET technology for enhanced high-frequency operation
Optimized for L-band and S-band RF signal processing applications
Employes 3-micron gate length design to support GHz-range frequencies
Configured in a small outline SOT-445 surface-mount package

Applications

L-band RF amplifier stages
S-band receiver front-end modules
Low-noise amplification in communication systems
RF signal conditioning circuits

Procurement Notes

Verify component authenticity through authorized channels due to obsolete lifecycle status. Confirm datasheet revisions match required electrical specifications. Ensure storage conditions comply with moisture sensitivity levels for surface-mount devices. Cross-reference pin assignments with schematic requirements before integration.

Selection Notes

Select this component for designs requiring GaAs MESFET performance in L or S bands. Evaluate thermal management capabilities within the SOT-445 footprint. Compare noise figure and gain parameters against system requirements. Consider availability constraints given the obsolete manufacturing status when planning long-term production runs.

Part Context

This part belongs to CEL's portfolio of RF discrete semiconductors. It represents a legacy GaAs MESFET solution prior to widespread adoption of newer process nodes. The NE650103M variant serves as the base model, with the -A suffix indicating specific testing or packaging configurations defined by the manufacturer for quality assurance.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.