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The NE6510179A-A is a Gallium Arsenide Heterojunction Field-Effect Transistor (GaAs HJ-FET) manufactured by California Eastern Laboratories. Designed for medium power applications, it operates effectively up to 3.7 GHz. The device delivers high output power and linear gain with excellent efficiency. It utilizes a low-cost plastic surface mount package suitable for tape and reel or bulk ordering.
Verify the -A suffix indicates lead-free compliance per RoHS directives. Confirm the specific package outline matches design requirements. Ensure operating limits regarding drain voltage and channel temperature are respected during integration. Check datasheet for absolute maximum ratings before finalizing circuit parameters.
Select this component for designs requiring high linearity and power in the L and S bands. Consider the 5V operation for higher power needs or 3.5V for efficiency. Evaluate thermal management due to the 5°C/W rating. Verify compatibility with GaAs process technologies and ensure biasing circuits support the recommended operating limits for optimal performance.
This part belongs to the NEC/CEL GaAs HJ-FET family designed for RF power amplification. It is engineered using stringent quality control procedures to ensure performance uniformity. The technology supports mobile communication standards and wireless access networks, providing a robust solution for transmitter stages in various frequency bands.
Consult manufacturer documentation for direct substitutes. Verify pinout compatibility and electrical specifications match application requirements. Ensure thermal characteristics and package dimensions align with existing board layouts when considering alternative components.