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The NE6510179A-T1-A is a GaAs HJ-FET designed for medium power mobile communications, fixed wireless access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter applications. It delivers 3W output power at 5V and 1.8W at 3.5V with high linear gain and efficiency. Usable to 3.7 GHz, it features low thermal resistance of 5°C/W and operates within a drain-to-source voltage range of 3.5V to 6.0V.
Verify the specific suffix -T1-A indicates tape and reel packaging containing one thousand pieces per reel. Confirm the -A suffix denotes lead-free compliance with RoHS directives. Ensure the component matches the original NEC or current CEL manufacturing specifications. Validate that the package outline corresponds to the 79A surface mount configuration.
Select this device for applications requiring high linearity and moderate power levels in the L and S bands. Consider the 5°C/W thermal resistance for heatsinking requirements. Evaluate the 3.5V to 6.0V recommended operating limits against system power supplies. Assess the 10 dB typical linear gain for matching network design needs.
This component belongs to the NE6510 series of Gallium Arsenide High Electron Mobility Transistors. Originally developed by NEC, production and support are managed by California Eastern Laboratories. The technology utilizes heterojunction field-effect transistor architecture optimized for RF power amplification in wireless communication systems.
Consult official manufacturer documentation for verified substitute part numbers. Cross-reference electrical characteristics such as breakdown voltage and thermal resistance before substitution.