NE651R479A-A

Overview

The NE651R479A-A is a Gallium Arsenide Heterojunction Field-Effect Transistor (GaAs HJ-FET) manufactured by California Eastern Laboratories. Designed for medium power applications, it delivers up to 1 Watt of continuous wave output power at 5 V and 0.5 Watts at 3.5 V. The device operates effectively up to 3.7 GHz with high linear gain and efficiency. It utilizes a low-cost plastic surface mount package suitable for tape and reel or bulk procurement.

Feature Summary

• High output power capability delivering 1 W at 5 V bias
• Operational frequency range extending to 3.7 GHz
• Low thermal resistance for efficient heat dissipation
• Plastic surface mount package design

Applications

• Mobile communications transmitter systems
• Fixed Wireless Access (FWA)
• Personal Communications Services (PCS)
• Multimedia Messaging Delivery Service (MMDS)

Procurement Notes

Verify the -A suffix confirms lead-free compliance per EU RoHS directives. Confirm package outline 79A dimensions match layout requirements. Ensure operating limits regarding drain-source voltage and channel temperature are respected during integration.

Selection Notes

Select this component for L-band and S-band transmitter stages requiring high linearity and power efficiency. Evaluate thermal management solutions based on the specified channel-to-case thermal resistance. Verify compatibility with standard GaAs process designs and biasing networks.

Part Context

This part belongs to the NEC/CEL GaAs MESFET and HJ-FET family. It serves as a driver amplifier or power stage in RF front-end modules. The technology leverages heterojunction properties for improved performance over standard planar FETs in mobile communication bands.

Replacement Considerations

NEC NE650R479A

FAQ

What is the maximum usable frequency?

The device is designed for operation up to 3.7 GHz.

Does the -A suffix change functionality?

No, the -A suffix indicates lead-free compliance and does not alter electrical characteristics.

What is the typical linear gain?

The typical linear gain is 12 dB at 1.9 GHz.