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The NE662M04-A is an NPN silicon RF transistor designed for low-noise, high-gain amplification. It utilizes a flat-lead 4-pin thin-type super minimold (M04) package and operates up to 2 GHz. Key electrical parameters include a collector-emitter voltage of 3.3 V, continuous collector current of 35 mA, and total power dissipation of 115 mW. At 2 GHz with VCE = 2 V and IC = 5 mA, it achieves a typical noise figure of 1.1 dB and associated gain of 16 dB. The maximum available power gain reaches 19 dB at IC = 20 mA.
Verify the specific ordering suffix against official documentation, as variations such as -T2 or -A indicate different supply forms like reels or non-reel quantities. Confirm RoHS compliance status and lead-free specifications directly from the manufacturer's datasheet before procurement. Ensure electrostatic discharge precautions are observed during handling due to device sensitivity.
Select this component when designing circuits requiring minimal noise figures around 1.1 dB at 2 GHz. Verify that the required collector current aligns with the 5 mA to 20 mA range for optimal gain and noise performance. Ensure the design accommodates the 115 mW total power dissipation limit and the 3.3 V maximum collector-emitter voltage rating.
The NE662M04-A is part of the 2SC5508 series manufactured by CEL, a business partner of Renesas Electronics Corporation. This series represents a specialized line of NPN silicon RF transistors engineered specifically for microwave frequency operations. The M04 package provides a standardized footprint suitable for surface-mount assembly in compact RF modules.
Publicly confirmed substitute part numbers for the NE662M04-A were not identified in the provided source material.