NE662M04-A

NE662M04-A

  • Description:RF TRANS NPN 3.3V 25GHZ SOT-343F
  • Series:-

SKU:eb7205ef22c6 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 3.3V 25GHZ SOT-343F
  • Series:-
  • Mfr:CEL
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):3.3V
  • Frequency - Transition:25GHz
  • Noise Figure (dB Typ @ f):1.1dB @ 2GHz
  • Gain:18dB
  • Power - Max:115mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 5mA, 2V
  • Current - Collector (Ic) (Max):35mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-343F
  • Supplier Device Package:SOT-343F
  • Grade:-
  • Qualification:-

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NE662M04-A

Overview

The NE662M04-A is an NPN silicon RF transistor designed for low-noise, high-gain amplification. It utilizes a flat-lead 4-pin thin-type super minimold (M04) package and operates up to 2 GHz. Key electrical parameters include a collector-emitter voltage of 3.3 V, continuous collector current of 35 mA, and total power dissipation of 115 mW. At 2 GHz with VCE = 2 V and IC = 5 mA, it achieves a typical noise figure of 1.1 dB and associated gain of 16 dB. The maximum available power gain reaches 19 dB at IC = 20 mA.

Feature Summary

  • Optimized for low-noise, high-gain amplification applications
  • Utilizes 25 GHz fT technology for superior RF performance
  • Available in a compact flat-lead 4-pin thin-type super minimold (M04) package

Applications

  • Low-noise amplifier circuits
  • High-gain RF signal processing
  • Wireless communication systems operating in the X-band

Procurement Notes

Verify the specific ordering suffix against official documentation, as variations such as -T2 or -A indicate different supply forms like reels or non-reel quantities. Confirm RoHS compliance status and lead-free specifications directly from the manufacturer's datasheet before procurement. Ensure electrostatic discharge precautions are observed during handling due to device sensitivity.

Selection Notes

Select this component when designing circuits requiring minimal noise figures around 1.1 dB at 2 GHz. Verify that the required collector current aligns with the 5 mA to 20 mA range for optimal gain and noise performance. Ensure the design accommodates the 115 mW total power dissipation limit and the 3.3 V maximum collector-emitter voltage rating.

Part Context

The NE662M04-A is part of the 2SC5508 series manufactured by CEL, a business partner of Renesas Electronics Corporation. This series represents a specialized line of NPN silicon RF transistors engineered specifically for microwave frequency operations. The M04 package provides a standardized footprint suitable for surface-mount assembly in compact RF modules.

Replacement Considerations

Publicly confirmed substitute part numbers for the NE662M04-A were not identified in the provided source material.

NE662M04-ANE662M04-A

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