NE68030-T1-R44-A

NE68030-T1-R44-A

  • Description:RF TRANS NPN 10V 10GHZ SOT-323
  • Series:-

SKU:5aae3f3b8236 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 10V 10GHZ SOT-323
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):10V
  • Frequency - Transition:10GHz
  • Noise Figure (dB Typ @ f):1.9dB @ 2GHz
  • Gain:9.4dB
  • Power - Max:150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 3V
  • Current - Collector (Ic) (Max):35mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323
  • Grade:-
  • Qualification:-

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NE68030-T1-R44-A

Overview

The NE68035-T1-R44-A is an NPN silicon high-frequency transistor from the California Eastern Laboratories NE680 series. It features a gain bandwidth product of 10 GHz and operates up to 6 GHz. Key electrical characteristics include a noise figure of 2.6 dB at 4 GHz, associated gain of 8.0 dB at 4 GHz, and maximum available gain of 10.2 dB at 4 GHz. The device supports a collector current of 35 mA with a collector-emitter voltage rating of 10 V. Total power dissipation is rated at 290 mW.

Feature Summary

  • High frequency operation suitable for applications up to 6 GHz
  • Low noise figure performance optimized for sensitive signal reception
  • High gain bandwidth product enabling efficient amplification
  • Capable of operation at low voltage and low current levels

Applications

  • Low noise amplifier stages in RF circuits
  • High frequency signal processing systems
  • Low voltage communication equipment

Procurement Notes

Verify the specific suffix -T1-R44-A against official documentation to confirm tape and reel packaging details. Confirm that the component meets all absolute maximum ratings including junction temperature limits during integration. Ensure compatibility with the intended PCB layout and thermal management requirements specified in the datasheet.

Selection Notes

Select this component for designs requiring high frequency performance up to 6 GHz with low noise characteristics. Consider the 35 mA collector current limit and 290 mW power dissipation when designing biasing networks. Evaluate the trade-off between noise figure and gain based on the specific operating frequency and bias conditions required by the application.

Part Context

This part belongs to the NE680 series of NPN epitaxial silicon transistors designed for low noise, high gain, and low cost applications. The series includes various package styles such as chip and micro-x versions. The NE680 series is noted for its high fT making it ideal for low voltage and low current applications.

Replacement Considerations

Consult the manufacturer's sales office for details on recommended alternatives as some parts in the NE680 series are not recommended for new design. Verify pinout compatibility and electrical specifications before substituting with other NPN transistors in the same frequency range.

NE68030-T1-R44-ANE68030-T1-R44-A

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