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The NE68035-T1-R44-A is an NPN silicon high-frequency transistor from the California Eastern Laboratories NE680 series. It features a gain bandwidth product of 10 GHz and operates up to 6 GHz. Key electrical characteristics include a noise figure of 2.6 dB at 4 GHz, associated gain of 8.0 dB at 4 GHz, and maximum available gain of 10.2 dB at 4 GHz. The device supports a collector current of 35 mA with a collector-emitter voltage rating of 10 V. Total power dissipation is rated at 290 mW.
Verify the specific suffix -T1-R44-A against official documentation to confirm tape and reel packaging details. Confirm that the component meets all absolute maximum ratings including junction temperature limits during integration. Ensure compatibility with the intended PCB layout and thermal management requirements specified in the datasheet.
Select this component for designs requiring high frequency performance up to 6 GHz with low noise characteristics. Consider the 35 mA collector current limit and 290 mW power dissipation when designing biasing networks. Evaluate the trade-off between noise figure and gain based on the specific operating frequency and bias conditions required by the application.
This part belongs to the NE680 series of NPN epitaxial silicon transistors designed for low noise, high gain, and low cost applications. The series includes various package styles such as chip and micro-x versions. The NE680 series is noted for its high fT making it ideal for low voltage and low current applications.
Consult the manufacturer's sales office for details on recommended alternatives as some parts in the NE680 series are not recommended for new design. Verify pinout compatibility and electrical specifications before substituting with other NPN transistors in the same frequency range.