NE68033-T1B-R45-A

Overview

The NE68033-T1B-R45-A is an NPN silicon epitaxial transistor designed for low-noise and small signal amplifiers in the VHF to UHF bands. It utilizes a direct nitride passivated base surface process to achieve excellent noise figures at high current values, providing wide dynamic range. Key electrical parameters include a collector-to-emitter voltage (VCEO) of 10 V, a collector current (IC) of 35 mA, and a total power dissipation (PT) of 200 mW. The device features a typical noise figure (NF) of 1.8 dB and a maximum available gain (MAG) of 10 dB at 2.0 GHz. The DC current gain (hFE) ranges from 125 to 250 for the R45 classification.

Feature Summary

• Employs a proprietary direct nitride passivated base surface process for superior noise performance at high currents.
• Delivers excellent associated gain and very wide dynamic range suitable for sensitive RF applications.
• Optimized for low-noise and small signal amplifier circuits across VHF to UHF frequency bands.

Applications

• Low-noise amplifiers
• Small signal amplifiers
• VHF band receiver front-ends
• UHF band receiver front-ends

Procurement Notes

Verify the specific hFE binning suffix 'R45' corresponds to the required gain range of 125 to 250 during component sourcing. Confirm that the package type matches the JEITA Super Minimold specifications provided in the datasheet. Ensure the ordering information aligns with the manufacturer's current production status, as this document indicates phase-out considerations.

Selection Notes

Select this component when designing circuits requiring minimal noise contribution in the VHF and UHF spectrum. The R45 hFE classification ensures a minimum gain of 125, which may simplify biasing networks compared to lower gain bins. Evaluate the 200 mW power dissipation limit against thermal management requirements for the intended operating environment.

Part Context

This part number represents a specific gain-bin variant of the NE68033 / 2SC3585 series manufactured by California Eastern Laboratories (CEL). The 'R45' suffix denotes a DC current gain range of 125 to 250. The device is also known by the equivalent designation 2SC3585. It belongs to a family of microwave low-noise amplifiers utilizing specialized surface passivation techniques.

Replacement Considerations

The NE68033 is functionally equivalent to the NEC 2SC3585. Verify pinout compatibility and parameter tolerances before substituting with other LNA transistors in the same frequency range.