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Product Detailed Parameters
- Description：RF TRANS NPN 10V 7GHZ SOT-323
- Series：-
- Mfr：CEL
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：10V
- Frequency - Transition：7GHz
- Noise Figure (dB Typ @ f)：1.5dB ~ 1.6dB @ 1GHz ~ 2GHz
- Gain：9dB ~ 13.5dB
- Power - Max：150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 7mA, 3V
- Current - Collector (Ic) (Max)：65mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SOT-323
- Grade：-
- Qualification：-
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Overview
The NE68130-T1 is an NPN epitaxial silicon transistor from the CEL NE681 series, packaged in a SOT-323 style outline. It is designed for low noise and high gain amplifier applications up to 4 GHz. Key electrical characteristics include a gain bandwidth product (fT) of 7.0 GHz at VCE = 3 V and IC = 7 mA, and a noise figure of 1.5 dB at 1 GHz with VCE = 8 V and IC = 7 mA. The device supports a maximum collector current of 65 mA and total power dissipation of 150 mW.
Feature Summary
- Optimized for simultaneous low noise and high gain performance using a single matching point.
- Suitable for amplifier applications operating up to 4 GHz frequency range.
- Available in multiple low-cost plastic surface mount package styles.
Applications
- Low noise amplifiers
- High gain RF circuits
- Amplifier stages up to 4 GHz
Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type matches the SOT-323 outline. Ensure sourcing channels are authorized distributors to avoid counterfeit parts. Review absolute maximum ratings before implementation to prevent permanent damage.
Selection Notes
Select this component when designing circuits requiring high gain bandwidth and low noise figures in the microwave frequency range. Consider the specific bias conditions provided in the datasheet for optimal noise and gain performance. Evaluate thermal resistance and power dissipation limits relative to the expected operating environment.
Part Context
The NE68130-T1 belongs to the NEC/CEL NE681 series of NPN silicon transistors. This series includes various package options such as chip, Micro-X, and several SOT styles. The series is characterized by unique device features allowing designers to achieve both low noise and high gain simultaneously.
Replacement Considerations
Consult manufacturer documentation for direct substitutes within the NE681 series. Verify pinout compatibility and electrical parameters match the original design requirements before replacing components.
