NE681M03-T1-A

NE681M03-T1-A

  • Description:RF TRANS NPN 10V 7GHZ M03
  • Series:-

SKU:fa1fefa07984 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 10V 7GHZ M03
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):10V
  • Frequency - Transition:7GHz
  • Noise Figure (dB Typ @ f):1.4dB ~ 2.7dB @ 1GHz
  • Gain:-
  • Power - Max:125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 7mA, 3V
  • Current - Collector (Ic) (Max):65mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-623F
  • Supplier Device Package:M03
  • Grade:-
  • Qualification:-

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NE681M03-T1-A

Overview

The NE681M03-T1-A is an NPN silicon RF bipolar transistor manufactured by CEL. It utilizes the M03 surface-mount package, which features a low profile of 0.59 mm and flat leads for improved RF performance. The device is designed for low noise and high gain applications in portable wireless systems. Key electrical parameters include a gain bandwidth product (fT) of 7 GHz, a noise figure (NF) of 1.4 dB, and an insertion power gain of 12 dB at 1 GHz. Absolute maximum ratings specify a collector-to-emitter voltage of 10 V, a collector current of 65 mA, and total power dissipation of 125 mW.

Feature Summary

  • Utilizes the M03 package with a 0.59 mm height and flat lead style to optimize RF performance.
  • Provides high gain bandwidth product suitable for frequencies up to 7 GHz.
  • Engineered for low noise figure applications ideal for sensitive receiver stages.

Applications

  • Low noise amplifier circuits
  • High gain amplifier stages
  • Portable wireless communication devices

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via the specific ordering suffix. Ensure storage conditions remain within the specified temperature range to maintain junction integrity. Validate pin connections against the official datasheet schematic before assembly.

Selection Notes

Select this component for designs requiring minimal footprint and low noise characteristics. Verify that operating bias conditions stay within the absolute maximum ratings. Consider thermal management capabilities given the small package size. Evaluate compatibility with existing PCB layout constraints due to the unique M03 outline dimensions.

Part Context

This part is distributed by California Eastern Laboratories as an agent for NEC semiconductor products. It belongs to the NE681 series of RF transistors. The -A suffix indicates Pb-free construction compliant with EU directives. The device serves as a discrete solution for microwave frequency amplification tasks.

Replacement Considerations

Check for direct substitutes within the same manufacturer family. Verify pinout compatibility if considering alternative packages. Ensure replacement parts meet the required fT and NF specifications for the target application frequency.

FAQ

What does the -A suffix indicate on the NE681M03-T1-A?

The -A suffix designates that the device is Pb-free and complies with the European Union Restriction on Use of Hazardous Substances directive.

What is the maximum collector-to-emitter voltage rating?

The absolute maximum rating for collector-to-emitter voltage (VCEO) is 10 V.

How is the M03 package configured electrically?

Pin 1 is the Emitter, Pin 2 is the Base, and Pin 3 is the Collector.

NE681M03-T1-ANE681M03-T1-A

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