NE85619-T1

Description：RF TRANS NPN 12V 4.5GHZ SOT-523
Series：-

SKU:6d4bf5c5338a Category: Bipolar RF Transistors Brand: CEL

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 12V 4.5GHZ SOT-523
Series：-
Mfr：CEL
Package：Tape & Reel (TR)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：4.5GHz
Noise Figure (dB Typ @ f)：1.4dB ~ 2.2dB @ 1GHz ~ 2GHz
Gain：6.5dB ~ 12.5dB
Power - Max：100mW
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 20mA, 10V
Current - Collector (Ic) (Max)：100mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-523
Supplier Device Package：SOT-523
Grade：-
Qualification：-

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NE85619-T1

Overview

The NE85619-T1 is an NPN epitaxial silicon high-frequency transistor manufactured by CEL. It features a gain bandwidth product of 7 GHz and a noise figure of 1.4 dB at 1 GHz. The device supports a maximum collector current of 100 mA with a forward current gain ranging from 50 to 300. Electrical characteristics are specified at VCE = 10 V and IC = 20 mA for fT, while noise parameters are measured at VCE = 10 V and IC = 7 mA. The component utilizes titanium/platinum/gold metallization and direct nitride passivated base surface processing for reliability.

Feature Summary

High gain bandwidth product suitable for wide dynamic range applications
Low noise figure performance optimized for amplifier and oscillator circuits
High collector current capability ensuring excellent linearity

Applications

Low cost RF amplifier designs
High frequency oscillator circuits
Wide dynamic range signal processing systems

Procurement Notes

Verify the specific suffix T1 against official documentation to confirm tape and reel packaging specifications. Confirm that the NE85619 variant meets current design requirements as other series numbers may be restricted for new designs. Cross-reference manufacturer datasheets for exact mechanical dimensions and handling instructions.

Selection Notes

Select this component when low noise figures and high gain are required in compact form factors. Evaluate thermal resistance and power dissipation limits relative to the target ambient temperature. Ensure biasing conditions align with the specified VCE and IC ranges to maintain optimal noise and gain performance.

Part Context

This part belongs to the NEC/CEL NE856 series of NPN silicon transistors designed for high-frequency applications. The series offers various package options including chip, Micro-x, and plastic styles. The NE85619 specifically utilizes a SOT-343 style outline, providing a balance between performance and size for consumer and industrial electronics.

Replacement Considerations

Consult official documentation for authorized substitutes within the NE856 series. Verify pinout compatibility and electrical parameter overlaps before implementation.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.