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Product Detailed Parameters
- Description：RF TRANS NPN 12V 6.5GHZ SOT-89
- Series：-
- Mfr：CEL
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：6.5GHz
- Noise Figure (dB Typ @ f)：1.1dB @ 1GHz
- Gain：12dB
- Power - Max：1.2W
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 20mA, 10V
- Current - Collector (Ic) (Max)：100mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-243AA
- Supplier Device Package：SOT-89
- Grade：-
- Qualification：-
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Overview
The CEL NE856M02-T1-AZ is a silicon NPN bipolar transistor designed for RF applications up to 6.5 GHz. It features a typical transition frequency (fT) of 6.5 GHz and a maximum collector-emitter voltage (VCEO) of 12 V. The device supports a maximum collector current (Ic) of 100 mA with a typical DC current gain (hFE) of 120 at 100 mA. Electrical characteristics are specified at a test frequency of 1 GHz with VCE set to 10 V. The component utilizes the M02 package, which corresponds to an SOT-89 surface-mount configuration.
Feature Summary
- Silicon NPN construction optimized for high-frequency signal amplification
- Capable of operation in RF circuits up to 6.5 GHz transition frequency
- Designed for low-noise performance in single-ended amplifier stages
Applications
- Low noise amplifier front ends
- RF signal conditioning stages
- Wireless communication transceivers
Procurement Notes
Verify the specific suffix -T1-AZ against the manufacturer's official documentation to confirm tape and reel packaging specifications and any unique material compliance declarations. Ensure the ordering code matches the exact M02 package variant required for your PCB footprint.
Selection Notes
Select this component when a silicon NPN transistor with a 6.5 GHz fT and 12 V VCEO rating is required. Compare its 100 mA Ic limit and 120 hFE against circuit bias requirements. Verify that the SOT-89 (M02) package dimensions align with the available board space and thermal management strategy.
Part Context
This part belongs to the CEL NE856 series of silicon bipolar transistors. These devices are engineered for general-purpose RF amplification tasks. The series offers a balance of gain, noise figure, and power handling suitable for consumer wireless and industrial ISM band applications.
Replacement Considerations
Check for direct equivalents such as the NEC 2SC5336 or other manufacturers' parts sharing the M02/SOT-89 package and similar electrical parameters. Validate pinout compatibility and thermal resistance before substitution.
