NGTB03N60R2DT4G

Overview

The NGTB03N60R2DT4G is a surface-mount N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a maximum continuous collector current of 9 A and a collector-emitter breakdown voltage of 600 V. The device operates with a maximum gate-emitter voltage of ±20 V and supports switching frequencies up to 1 MHz. Packaged in a DPAK (TO-252) housing, it has three pins and a single transistor configuration. The component is rated for a maximum power dissipation of 49 W and functions within an operating temperature range extending up to +175 °C.

Feature Summary

• High-speed switching capability supporting frequencies up to 1 MHz
• Robust thermal performance allowing operation at junction temperatures up to +175 °C
• Integrated anti-parallel diode within the single transistor configuration

Applications

• Industrial motor control systems
• Consumer appliance power conversion circuits
• Induction cooktop inverter stages

Procurement Notes

Verify the specific datasheet revision and ordering suffix when sourcing components. Confirm that the package marking matches the official onsemi identification standards. Ensure compliance with RoHS directives as indicated in the product specifications. Cross-reference the manufacturer part number against authorized distributor catalogs to validate authenticity and traceability before procurement.

Selection Notes

Select this component for applications requiring high-voltage blocking capabilities combined with moderate current handling in a compact surface-mount form factor. Evaluate the thermal resistance characteristics relative to the intended PCB copper area to ensure adequate heat dissipation. Consider the switching speed requirements of the circuit design to optimize efficiency and minimize electromagnetic interference during operation.

Part Context

This IGBT belongs to onsemi's portfolio of field-stop technology devices designed for energy-efficient power conversion. It is engineered to replace through-hole alternatives in space-constrained designs while maintaining reliable performance in demanding industrial and consumer environments. The device integrates advanced silicon processing to enhance switching characteristics compared to standard trench technologies.

Replacement Considerations

Direct pin-to-pin replacements should be verified against the official onsemi substitution guide. Alternative parts must match the 600V rating, 9A current capacity, and DPAK package dimensions. Verify that substitute devices offer comparable saturation voltage and switching times to maintain original circuit performance.