NGTB15N120IHLWG

Overview

The onsemi NGTB15N120IHLWG is a Field-Stop IGBT featuring an N-channel configuration housed in a TO-247 package. It supports through-hole mounting with three terminals. The device handles a maximum continuous collector current of 50 A and withstands a collector-emitter voltage of 1200 V. Maximum power dissipation reaches 192 W, while the collector-emitter saturation voltage is rated at 2.3 V. The gate-emitter voltage limit is ±20 V. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

• Field-Stop technology for optimized switching performance
• High thermal stability within specified temperature limits
• Robust packaging for reliable through-hole integration

Applications

• Industrial motor drives
• Switched-mode power supplies
• Inverter circuits

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheets. Confirm RoHS compliance status via supplier documentation. Ensure storage conditions prevent electrostatic discharge damage prior to installation. Validate pinout alignment with PCB footprints before soldering.

Selection Notes

Select this component when high voltage blocking capability and moderate current handling are required. Consider the specific saturation voltage characteristics for efficiency calculations. Verify thermal management requirements align with the 192 W dissipation rating under expected load conditions.

Part Context

This part belongs to the IGTB series of Field-Stop Insulated Gate Bipolar Transistors. It shares the TO-247 form factor with other high-voltage discrete devices from the manufacturer. The series targets applications requiring robust switching capabilities in industrial environments.

Replacement Considerations

Direct substitutes include NGTB25N120IHLWG for higher current capacity or NGTB15N120IHWG for similar specifications. Verify pin compatibility and thermal resistance values before substitution.