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Product Detailed Parameters
- Description：IGBT NPT 600V 30A TO-220AB
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 15A
- Power - Max：117 W
- Switching Energy：900µJ (on), 300µJ (off)
- Input Type：Standard
- Gate Charge：80 nC
- Td (on/off) @ 25°C：78ns/130ns
- Test Condition：400V, 15A, 22Ohm, 15V
- Reverse Recovery Time (trr)：270 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The NGTB15N60EG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 15 A at 25 °C. The device utilizes Field-Stop technology to achieve low saturation voltage, with a typical value of 1.75 V at 15 A. It is housed in a TO-247 package designed for through-hole mounting. The component supports a maximum power dissipation of 230 W and operates within a junction temperature range of -55 °C to +175 °C.
Feature Summary
- Field-Stop trench technology for optimized switching performance
- Short-circuit ruggedness capability
- Low saturation voltage for reduced conduction losses
Applications
- Motor control drives
- Switched-mode power supplies
- Induction heating systems
Procurement Notes
Verify the specific datasheet revision when sourcing this component, as electrical characteristics may vary between manufacturing lots or updates. Confirm that the TO-247 package dimensions match the target PCB footprint requirements. Ensure thermal interface materials are compatible with the specified maximum junction temperature limits during system integration.
Selection Notes
Select this IGBT for applications requiring robust short-circuit handling and efficient power conversion at 600 V ratings. Compare the saturation voltage and switching energy parameters against alternative devices to ensure optimal efficiency for the specific load profile. Verify gate drive compatibility with the recommended operating voltage range for reliable turn-on and turn-off behavior.
Part Context
This component belongs to onsemi's NGTB series of high-voltage IGBTs. The series is engineered for industrial and consumer applications demanding high reliability. The TO-247 form factor provides a balance between current handling capacity and thermal management capabilities suitable for medium-power designs.
Replacement Considerations
Check the NGTG15N60S1EG for similar specifications. Verify pinout compatibility and thermal resistance values before substitution. Ensure the replacement part meets the same voltage and current ratings required by the circuit design.
