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The NGTB30N60IHLWG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a trench gate technology designed for high-frequency operation and low switching losses. The device is rated for a maximum collector-emitter voltage of 600 V and a continuous collector current of 30 A at 25°C. It utilizes the PowerMESH process to achieve an optimal balance between conduction and switching performance. The component is housed in a TO-247 package, suitable for through-hole mounting, with a maximum power dissipation capability of 210 W.
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and compliance specifications. Confirm that the component meets the required environmental standards for the intended deployment environment before finalizing procurement orders.
Select this IGBT for designs requiring robust performance at 600 V blocking voltage. Ensure the thermal management solution supports the specified power dissipation limits. Verify gate drive requirements align with the standard input type specifications provided in the electrical characteristics table.
This component belongs to onsemi's discrete IGBT portfolio, specifically utilizing the PowerMESH technology line. It is part of the NGT series, which focuses on balancing conduction losses with switching speed for efficient power conversion applications.
Direct replacements include the NGTB30N60FWG and NGTG30N60FLWG. These alternatives share similar voltage and current ratings but may exhibit slight variations in switching energy or saturation voltage. Verify pinout compatibility and thermal resistance parameters before substitution.