NGTB30N60IHLWG

NGTB30N60IHLWG

$1.99
  • Description:IGBT TRENCH FS 600V 60A TO-247-3
  • Series:-

SKU:4604b4743460 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 600V 60A TO-247-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube,Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):60 A
  • Current - Collector Pulsed (Icm):150 A
  • Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 30A
  • Power - Max:250 W
  • Switching Energy:280µJ (off)
  • Input Type:Standard
  • Gate Charge:130 nC
  • Td (on/off) @ 25°C:70ns/140ns
  • Test Condition:400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr):400 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Grade:-
  • Qualification:-

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NGTB30N60IHLWG

Overview

The NGTB30N60IHLWG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a trench gate technology designed for high-frequency operation and low switching losses. The device is rated for a maximum collector-emitter voltage of 600 V and a continuous collector current of 30 A at 25°C. It utilizes the PowerMESH process to achieve an optimal balance between conduction and switching performance. The component is housed in a TO-247 package, suitable for through-hole mounting, with a maximum power dissipation capability of 210 W.

Feature Summary

  • Utilizes advanced PowerMESH trench gate technology for improved efficiency.
  • Optimized trade-off between low on-state voltage and fast switching characteristics.
  • Designed for high-frequency applications up to 50 kHz.
  • Features reduced cross-conduction susceptibility due to optimized capacitance ratios.

Applications

  • High-frequency motor drives
  • Switching power supplies
  • Induction heating systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and compliance specifications. Confirm that the component meets the required environmental standards for the intended deployment environment before finalizing procurement orders.

Selection Notes

Select this IGBT for designs requiring robust performance at 600 V blocking voltage. Ensure the thermal management solution supports the specified power dissipation limits. Verify gate drive requirements align with the standard input type specifications provided in the electrical characteristics table.

Part Context

This component belongs to onsemi's discrete IGBT portfolio, specifically utilizing the PowerMESH technology line. It is part of the NGT series, which focuses on balancing conduction losses with switching speed for efficient power conversion applications.

Replacement Considerations

Direct replacements include the NGTB30N60FWG and NGTG30N60FLWG. These alternatives share similar voltage and current ratings but may exhibit slight variations in switching energy or saturation voltage. Verify pinout compatibility and thermal resistance parameters before substitution.

NGTB30N60IHLWGNGTB30N60IHLWG
$1.99
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