NGTB35N60FL2WG

Overview

The onsemi NGTB35N60FL2WG is a Field Stop II N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 70 A at 25°C. The device utilizes trench gate technology to achieve low saturation voltage, specified as 1.7 V typical at 35 A. Packaged in a TO-247 through-hole housing, it supports a maximum power dissipation of 300 W and operates within a junction temperature range of -55°C to 175°C. The component is RoHS compliant and suitable for hard-switching frequencies up to 1 MHz.

Feature Summary

• Field Stop II technology provides optimized trade-off between conduction losses and switching performance.
• Trench gate architecture ensures low saturation voltage for improved thermal efficiency.
• Robust TO-247 package design facilitates effective heat dissipation for high-power modules.

Applications

• High-frequency motor drives and inverters
• Switched-mode power supplies (SMPS)
• Industrial welding equipment

Procurement Notes

Verify the specific suffix 'WG' against the manufacturer's latest datasheet to confirm compliance with current environmental directives and pinout configurations. Ensure that the ordering documentation explicitly references the full part number to distinguish it from similar variants within the Field Stop II family. Cross-reference the date code and lot traceability requirements with your quality management standards prior to finalizing procurement orders.

Selection Notes

Select this component when a 600 V blocking capability and 70 A current handling are required in a standard through-hole form factor. The Field Stop II technology makes it appropriate for applications demanding lower conduction losses compared to conventional IGBTs. Evaluate the thermal resistance characteristics of the TO-247 package against your heatsinking strategy to ensure the junction temperature remains within the 175°C limit under worst-case operating conditions.

Part Context

This device belongs to onsemi's Field Stop II series, which integrates advanced trench gate technology to enhance switching speed and reduce energy loss. The NGTB35N60FL2WG shares architectural similarities with other members of the NGTBxxN60FL2WG family, differing primarily in current ratings and specific thermal parameters. It serves as a discrete solution for medium-power conversion stages where reliability and efficiency are critical.

Replacement Considerations

Direct replacements include the NGTB35N60LTT4G or NGTB35N60L2TF1G, provided the electrical characteristics and pinout compatibility are verified. Always consult the official replacement guide to confirm that thermal resistance and switching times meet the original design specifications without requiring circuit modifications.