NGTB40N120IHRWG

$5.75

Description：IGBT TRENCH FS 1200V 80A TO-247
Series：-

SKU:493314874494 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 80A TO-247
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：2.55V @ 15V, 40A
Power - Max：384 W
Switching Energy：950µJ (off)
Input Type：Standard
Gate Charge：225 nC
Td (on/off) @ 25°C：-/230ns
Test Condition：600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247
Grade：-
Qualification：-

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NGTB40N120IHRWG

Overview

The onsemi NGTB40N120IHRWG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing High Voltage Field-Stop technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 40 A at 25°C, derating to 20 A at 100°C. The device operates with a maximum power dissipation of 349 W in a TO-247 package. Key electrical parameters include a collector-emitter saturation voltage of 2.0 V, a gate-emitter threshold voltage ranging from 3.0 V to 6.0 V, and a maximum gate-emitter voltage of ±20 V. It supports a junction temperature range from -55°C to +175°C.

Feature Summary

High Voltage Field-Stop technology for optimized switching performance
Soft recovery anti-parallel diode integrated within the module
Robust short-circuit capability for industrial protection

Applications

Industrial motor drives
Switched-mode power supplies
Inverter circuits

Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm exact electrical tolerances and packaging variations. Ensure compatibility with existing thermal management designs given the 349 W dissipation rating. Confirm RoHS compliance status through the latest datasheet revision before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring high blocking voltage and moderate current handling in a standard through-hole package. Compare the 2.0 V saturation voltage against alternative IGBTs to evaluate conduction losses. Consider the 175°C maximum junction temperature for high-temperature operational environments without excessive derating.

Part Context

This part belongs to onsemi's discrete IGBT portfolio designed for general-purpose power switching. It utilizes the company's proprietary Field-Stop trench technology to balance low conduction losses with fast switching speeds. The TO-247 form factor provides a reliable mechanical interface for heatsink mounting in various power electronics assemblies.