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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 100A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 75A
- Power - Max：595 W
- Switching Energy：1.5mJ (on), 1mJ (off)
- Input Type：Standard
- Gate Charge：310 nC
- Td (on/off) @ 25°C：110ns/270ns
- Test Condition：400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr)：80 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The NGTB75N65FL2WG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes Field Stop II Trench technology and is housed in a TO-247 package for through-hole mounting. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 100 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.75 V, a power dissipation rating of 595 W, and an operating temperature range from -55°C to +175°C. The gate-emitter voltage limits are specified between -20 V and +20 V.
Feature Summary
- Field Stop II Trench construction provides superior performance with low on-state voltage and minimal switching loss.
- Integrated soft and fast co-packaged free-wheeling diode features low forward voltage characteristics.
- Separate emitter drive pin design significantly reduces turn-on energy losses compared to standard three-terminal packages.
Applications
- Uninterruptible Power Supply (UPS) inverters
- Solar power applications
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm exact technical specifications and compliance status. Ensure that any additional characters in the part number do not indicate variations in packaging, terminal finish, or electrical ratings before finalizing procurement orders.
Selection Notes
Select this component for high-speed switching applications requiring robust thermal performance and low conduction losses. The separate emitter pin configuration is critical for minimizing parasitic inductance effects in high-current circuits. Confirm that the required voltage and current ratings align with the system's operational demands and thermal management capabilities.
Part Context
This IGBT belongs to the NGTB75N65FL2 series, which represents onsemi's Field Stop II technology line. These devices are engineered for demanding industrial and renewable energy environments where efficiency and reliability are paramount. The series emphasizes optimized gate control to lower switching losses while maintaining high surge current capability.
Replacement Considerations
Direct substitutes within the same family include NGTB75N65FL2WAG, which shares similar electrical characteristics but utilizes a TO-247-4L package. Verify pinout compatibility and thermal interface requirements when considering alternative package variants or cross-manufacturer equivalents.
