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Product Detailed Parameters
- Description：IGBT NPT 600V 30A TO-220AB
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 15A
- Power - Max：117 W
- Switching Energy：550µJ (on), 350µJ (off)
- Input Type：Standard
- Gate Charge：88 nC
- Td (on/off) @ 25°C：65ns/170ns
- Test Condition：400V, 15A, 22Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The NGTG15N60S1EG is a short-circuit rated N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 15 A at 25 °C. The device exhibits a maximum collector-emitter saturation voltage of 1.9 V under specified test conditions. Designed for robust operation, it supports a maximum junction temperature of 175 °C and includes a negative gate-emitter threshold capability of -8 V. The component is housed in a TO-220 package with three leads.
Feature Summary
- Short-circuit ruggedness designed to withstand fault currents for defined durations
- Negative gate-emitter threshold voltage enabling reliable noise immunity in high-gain applications
- Low saturation voltage characteristics optimized for conduction efficiency
Applications
- Induction heating systems requiring high fault tolerance
- Switch-mode power supplies with strict short-circuit protection requirements
- Motor drive inverters operating in harsh electrical environments
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout configuration and thermal characteristics. Ensure compliance with RoHS directives as stated in the product documentation. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.
Selection Notes
Select this component when circuit designs demand explicit short-circuit survival capabilities rather than standard IGBT protection. Evaluate the thermal resistance parameters relative to the intended heatsinking strategy. Confirm that the 600 V blocking voltage aligns with the system's DC bus voltage and transient overvoltage margins.
Part Context
This device belongs to the NGTG series of short-circuit rated IGBTs from onsemi. The series is engineered for industrial applications where system reliability during fault conditions is critical. It complements other discrete power devices within the manufacturer's portfolio for complete power stage solutions.
Replacement Considerations
Direct replacements must match the 600 V rating, 15 A current capacity, and TO-220 package. Verify that substitute parts also possess documented short-circuit ratings and compatible gate charge specifications to maintain switching performance.
