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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-247
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 75A
- Power - Max：600 W
- Switching Energy：2.9mJ (on), 1.1mJ (off)
- Input Type：Standard
- Gate Charge：160 nC
- Td (on/off) @ 25°C：29ns/170ns
- Test Condition：400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr)：165 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3L
- Grade：-
- Qualification：-
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Overview
The NGW75T65H3DFQ is a third-generation trench field-stop Insulated-Gate Bipolar Transistor (IGBT) with an integrated full-rated silicon diode, manufactured by Nexperia. It operates at a collector-emitter voltage of 650 V and supports a continuous collector current of 80 A at 25 °C case temperature. The device features optimized turn-off losses and a maximum junction temperature rating of 175 °C. Packaged in a TO-247-3 (SOT429-5) plastic single-ended through-hole format, it includes a heatsink-mounted base connected to the collector. Key electrical parameters include a typical saturation voltage of 1.6 V at 75 A and 25 °C, and a total switching energy loss of 4.0 mJ under standard test conditions.
Feature Summary
- Combines carrier stored trench-gate and field-stop structures for low conduction and switching losses.
- Features stable and tight parameter distributions to facilitate easy parallel operation.
- Includes a fully rated fast reverse recovery diode suitable for inverter applications.
Applications
- Uninterruptible Power Supply (UPS) inverters
- EV charging converters
- Power Factor Correction (PFC) circuits
- Induction heating systems
- Welding equipment
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and reel specifications. Confirm that the component meets the required thermal and electrical ratings for the target application environment. Ensure compatibility with existing PCB footprints and mounting hardware before finalizing procurement orders.
Selection Notes
Select this IGBT for high-voltage, high-frequency industrial power inverter applications requiring robust performance up to 175 °C. Consider the 650 V rating and 80 A current capability when designing hard-switching circuits. Evaluate the thermal resistance characteristics and gate drive requirements to optimize switching losses and ensure reliable operation within the safe operating area.
Part Context
This component belongs to Nexperia's NGW series of trench field-stop IGBTs, designed for high-efficiency power conversion. The 'H3' designation typically indicates a specific speed grade or characteristic variant within the product family. These devices are engineered to replace older generation IGBTs in demanding industrial and automotive-grade power electronics applications.
Replacement Considerations
Consult the official Nexperia datasheet for confirmed substitute part numbers. Verify pinout compatibility, voltage/current ratings, and thermal characteristics before substituting any alternative components in existing designs.
