NIMD6001NR2G

FET, MOSFET Arrays Overview

The NIMD6001NR2G is a dual N-channel MOSFET array manufactured by onsemi, designed for surface-mount applications in an 8-SOIC package. It features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 3.3A at the maximum junction temperature. The device exhibits a maximum gate threshold voltage (Vgs(th)) of 3V at 250µA and a typical gate charge (Qg) of 9nC at 5V. Input capacitance (Ciss) is specified as 175pF at 15V. The component operates within a temperature range of -55°C to 150°C and holds AEC-Q101 automotive qualification.

FET, MOSFET Arrays Feature Summary

• Automotive-grade reliability certified under AEC-Q101 standards
• Dual N-channel configuration integrated into a compact 8-SOIC surface-mount package
• Low gate charge characteristics supporting efficient switching performance

FET, MOSFET Arrays Applications

• Automotive electronic systems requiring qualified discrete components
• General-purpose power switching circuits
• Low-voltage load management applications

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm specific ordering suffixes match exact package and tape-and-reel specifications. Request official datasheets and quality certificates to ensure compliance with automotive standards. Validate lot traceability and RoHS status prior to integration into production schedules.

FET, MOSFET Arrays Selection Notes

Evaluate thermal management requirements against the 150°C maximum junction temperature limit. Ensure gate drive voltages remain within specified thresholds to maintain optimal Rds(on) performance. Consider the 8-SOIC footprint constraints during PCB layout design. Verify that system voltage levels do not exceed the 60V drain-source rating under all operating conditions.

FET, MOSFET Arrays Part Context

This component belongs to the NIMD6001 series of dual MOSFET arrays from onsemi. The series provides integrated solutions for space-constrained designs requiring multiple switching elements. Variants within this family share similar electrical profiles but may differ in packaging options or specific parameter tolerances defined by the manufacturer.

FET, MOSFET Arrays Replacement Considerations

Cross-reference with NIMD6001ANR2G for potential functional compatibility. Verify pinout alignment and electrical parameter equivalence before substitution. Consult official replacement guides to confirm package integrity and thermal characteristics match the original design requirements.