NJVBD437TG

$0.22

Description：BIP C77 NPN 4A 45V
Series：*

SKU:562308aca93f Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

NJVBD437TG is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is BIP C77 NPN 4A 45V. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for NJVBD437TG

Description：BIP C77 NPN 4A 45V
Series：*
Mfr：onsemi
Package：Bulk
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for NJVBD437TG

NJVBD437TG

Single Bipolar Transistors Overview

The NJVBD437TG is an NPN silicon epitaxial-base power transistor manufactured by onsemi. It belongs to the BD437 series and is housed in a TO-225 package with three pins for through-hole mounting. The device supports a maximum continuous collector current of 4 A and a collector-emitter voltage (VCEO) of 45 V. Key electrical characteristics include a collector-base voltage (VCBO) of 45 V, an emitter-base voltage (VEBO) of 5 V, and a power dissipation rating of 36 W. The saturation voltage (VCE(sat)) is specified at 800 mV, with a minimum DC current gain (hFE) of 30. The transition frequency (fT) is rated at 3 MHz, and it operates within a temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

Utilizes silicon epitaxial-base technology for robust performance in medium power applications.
Designed for efficient switching and linear operation with low saturation voltage characteristics.
Features high thermal stability suitable for demanding operating environments.

Single Bipolar Transistors Applications

Medium power linear amplifier circuits
General-purpose switching applications
Car-radio output stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'G' or 'T' against the manufacturer's official datasheet to confirm packaging details and compliance status. Ensure the component matches the required TO-225 form factor and pinout configuration for your design. Cross-reference the part number with authorized distributors to validate authenticity and avoid counterfeit components.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN power transistor with 4 A current handling and 45 V breakdown is required. Consider the TO-225 package constraints for board space and thermal management. Compare the 3 MHz transition frequency against application speed requirements. Verify that the 36 W power dissipation rating aligns with the system's thermal design capabilities.

Single Bipolar Transistors Part Context

This part is part of the BD437 family of complementary silicon power transistors. It serves as the NPN counterpart to PNP types such as the BD438. The series is engineered for reliability in consumer electronics and automotive audio systems, providing a balance of current capacity and voltage tolerance for standard power control tasks.

Single Bipolar Transistors Replacement Considerations

Direct substitutes within the same family include the BD437G. Complementary PNP equivalents are available as BD438 or BD438G. Verify pin compatibility and thermal resistance values before swapping with other manufacturers' parts.