NJVMJD350T4G

$0.90

Description：TRANS PNP 300V 0.5A DPAK
Series：-

SKU:1bf54cb20d61 Category: Single Bipolar Transistors Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

NJVMJD350T4G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 300V 0.5A DPAK. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for NJVMJD350T4G

Description：TRANS PNP 300V 0.5A DPAK
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：PNP
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：300 V
Vce Saturation (Max) @ Ib, Ic：1V @ 10mA, 100mA
Current - Collector Cutoff (Max)：100µA
DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 50mA, 10V
Power - Max：1.56 W
Frequency - Transition：10MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：DPAK
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for NJVMJD350T4G

NJVMJD350T4G

Single Bipolar Transistors Overview

The NJVMJD350T4G is a PNP silicon power transistor manufactured by onsemi, housed in a DPAK (TO-252) surface-mount package. It features a maximum collector-emitter voltage of 300 Vdc and a continuous collector current rating of 0.5 Adc. The device supports a peak collector current of 0.75 Adc and handles up to 15 W of total power dissipation at a case temperature of 25°C. It operates within a junction temperature range of -65°C to +150°C.

Single Bipolar Transistors Feature Summary

NJV prefix designates automotive qualification with AEC-Q101 standards and PPAP capability.
Electrically similar to the popular MJE350 series for direct compatibility.
Lead-formed configuration designed specifically for surface mount applications.

Single Bipolar Transistors Applications

Line operated audio output amplifiers
Switchmode power supply drivers
General purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix 'G' confirms the Pb-Free package status as specified in the datasheet. Confirm the 'NJV' prefix indicates the required automotive site and control change requirements. Ensure the tape and reel quantity matches the standard 2,500 units per reel specification found in the ordering information section.

Single Bipolar Transistors Selection Notes

Select this component when high-voltage PNP switching is required in a compact surface-mount form factor. The device offers thermal performance comparable to through-hole equivalents while maintaining electrical similarity to legacy parts. Consider the specific derating curves for ambient versus case temperatures when designing the thermal management strategy.

Single Bipolar Transistors Part Context

This part belongs to the MJD3x0 family of high voltage power transistors from onsemi. The MJD350 variant specifically provides PNP polarity, complementing the NPN MJD340. These devices are engineered for robust performance in power conversion and amplification circuits requiring reliable operation under high voltage stress conditions.

Single Bipolar Transistors Replacement Considerations

MJD350T4G

Single Bipolar Transistors FAQ

What is the difference between the MJD350 and NJVMJD350T4G?

The NJV prefix indicates that the device meets automotive qualification standards (AEC-Q101) and is PPAP capable, ensuring unique site and control change requirements compared to the standard commercial MJD350T4G.