NM27C256QE150

Memory IC Overview

The NM27C256QE150 is a 256Kb (32K x 8) CMOS EPROM manufactured by onsemi. It features parallel memory interface and UV erasability within a 28-CDIP windowed ceramic package. The device operates at a supply voltage of 4.5V to 5.5V with an access time of 150 ns. It supports through-hole mounting and functions within a commercial temperature range of 0°C to 70°C.

Memory IC Feature Summary

• UV-erasable non-volatile memory technology for data retention
• Parallel interface architecture for direct system connection
• Windowed ceramic package enabling ultraviolet reprogramming

Memory IC Applications

• Industrial control systems requiring firmware storage
• Embedded applications needing field-reprogrammable code
• Legacy hardware maintenance and prototyping

Memory IC Procurement Notes

Verify the component status as discontinued before procurement planning. Confirm that the specific E150 suffix matches the required 150 ns access time specification. Ensure the design accommodates the 28-CDIP windowed package requirements for UV exposure during erasure cycles.

Memory IC Selection Notes

Select this part when a parallel interface and UV erasability are mandatory for the application. Consider the 150 ns access speed against system timing requirements. Evaluate the need for a windowed package versus sealed alternatives if field reprogramming is not required.

Memory IC Part Context

This component belongs to the NM27C256 family of high-performance CMOS EPROMs. It serves as a standard solution for storing executable code in embedded systems where non-volatility and reprogrammability are essential. The device represents a legacy memory technology often used in industrial and automotive contexts.

Memory IC Replacement Considerations

Public confirmed substitute part numbers include NM27C256QE200, NM27C256QM150, and NM27C256QM200. Verify pinout compatibility and access time specifications when substituting.