NPT1012B

NPT1012B

$133.27
  • Description:RF MOSFET HEMT 28V
  • Series:-

SKU:d3b2cd209758 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET HEMT 28V
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Technology:HEMT
  • Frequency:0Hz ~ 4GHz
  • Gain:13dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:225 mA
  • Power - Output:-
  • Voltage - Rated:100 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Configuration:-

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NPT1012B

Overview

The NPT1012B is a Gallium Nitride (GaN) RF power transistor manufactured by MACOM Technology Solutions. It belongs to the next generation of high-power RF semiconductor technology, designed for robust performance in demanding radio frequency applications. The device utilizes advanced GaN material properties to deliver efficient power amplification with high breakdown voltage capabilities.

Feature Summary

  • Utilizes next-generation high-power RF semiconductor technology for enhanced reliability
  • Constructed using Gallium Nitride (GaN) material for superior thermal and electrical performance
  • Designed as an RF power transistor optimized for high-frequency signal amplification

Applications

  • Radio Frequency Power Amplification
  • Military Radar Systems
  • Communications Infrastructure

Procurement Notes

Verify the specific datasheet version for the NPT1012B, as it represents a next-generation variant distinct from the standard NPT1012. Confirm package type and pinout compatibility with existing designs. Ensure sourcing from authorized MACOM distributors to guarantee authenticity and traceability of the GaN semiconductor components.

Selection Notes

Select the NPT1012B when next-generation high-power RF performance is required. Compare its specifications against the standard NPT1012 to determine if the updated technology offers necessary improvements in power density or efficiency. Evaluate thermal management requirements suitable for GaN devices in your specific circuit topology.

Part Context

This component is part of MACOM's broader portfolio of Gallium Nitride RF power transistors. It sits alongside other models like the NPT1012 and NPT35050A, representing the company's focus on advanced semiconductor materials for high-performance RF solutions. The NPT series is widely recognized in defense and communications sectors.

Replacement Considerations

The NPT1012 serves as a direct predecessor model within the same product family. Verify if the standard NPT1012 meets all design requirements before selecting this next-generation variant. Cross-reference pinouts and thermal characteristics to ensure seamless integration into existing hardware platforms.

NPT1012BNPT1012B
$133.27
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