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The NPT2010 is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for high-performance RF amplification. It operates across a frequency range of DC to 2.2 GHz with a rated voltage of 48 V and an output power capability of 100 W. The device features a test current of 600 mA and delivers an output power of 95 W under specified conditions. This component is classified as obsolete within the manufacturer's portfolio.
Verify availability through authorized distributors, noting that this specific part number is officially listed as obsolete by the manufacturer. Confirm end-of-life status and potential supply constraints before initiating procurement processes.
Consider alternative GaN HEMT devices from the same product family or newer generations due to the obsolete status of the NPT2010. Evaluate replacement options based on matching voltage ratings, power output capabilities, and frequency ranges to ensure system compatibility.
The NPT2010 belongs to MACOM's portfolio of Gallium Nitride semiconductor solutions. These components are engineered for demanding RF and microwave environments, providing robust performance in critical signal processing applications across various industrial sectors.
Public confirmed substitute part numbers include the NPT2018.