NPT35015D

Overview

The NPT35015 is a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) power transistor designed for operation in the 3.3 to 3.8 GHz frequency range. It delivers an output power of 18 W at 3 dB compression under continuous wave conditions and supports pulsed operation up to 20 W. The device operates with a drain-source voltage of 28 V and a quiescent current of 200 mA, achieving a typical small-signal gain of 11 dB and a drain efficiency of 48% at 3 dB compression. For linear applications, it provides 1.7 W of average output power with 18% drain efficiency when driving a single-carrier OFDM waveform.

Feature Summary

• Optimized for CW, pulsed, and linear operation across the 3.3 to 3.8 GHz band
• Thermally-enhanced surface mount plastic package with exposed paddle for low thermal resistance
• High reliability gold metallization process ensuring robust performance
• Capable of supporting high peak envelope power alongside standard continuous wave output

Applications

• Defense communications systems
• Land mobile radio infrastructure
• Avionics communication equipment
• Wireless infrastructure base stations
• ISM band and VHF/UHF/L/S-band radar systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging format. The 'DT' suffix indicates tube packaging containing 97 pieces, while the 'DR' suffix denotes reel packaging containing 1500 pieces. Confirm RoHS compliance status and export control classification EAR99 requirements prior to procurement to ensure regulatory adherence.

Selection Notes

Select this component for designs requiring high linearity and power density in the L-band spectrum. Ensure the application board utilizes Rogers RO4350 substrate material as specified in reference designs to achieve optimal impedance matching. Verify that the thermal management solution can maintain junction temperatures below 200°C to guarantee long-term reliability and meet MTTF targets.

Part Context

This device belongs to MACOM's portfolio of GaN power transistors engineered for broadband RF applications. It utilizes a thermally-enhanced surface mount SOIC package to facilitate integration into compact circuit boards. The product is manufactured using a high-reliability gold metallization process suitable for demanding commercial and defense environments.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.