NPT35050AB

Overview

The NPT35050AB is an RF MOSFET HEMT designed for high-frequency amplification. It operates in the 3.3GHz to 3.8GHz range with a drain voltage of 28V. The device delivers 6W output power and provides 12dB gain at 750mA current.

Feature Summary

• High Electron Mobility Transistor (HEMT) architecture for efficient high-frequency operation
• Optimized for linear amplification within the specified microwave frequency band

Applications

• Wireless infrastructure base station amplifiers
• Point-to-point microwave communication links
• Military radar systems requiring stable gain

Procurement Notes

Verify the specific datasheet revision and package marking against the manufacturer's official documentation before procurement. Ensure that the supply chain source provides valid traceability certificates. Confirm that the component meets all environmental compliance standards required for the intended deployment environment.

Selection Notes

Select this component when a robust GaN or LDMOS alternative is not required, specifically targeting the 3.3-3.8GHz band. Evaluate thermal management requirements carefully as the device dissipates significant power. Compare linearity metrics against system noise floor requirements to ensure signal integrity is maintained during peak transmission periods.

Part Context

MACOM Technology Solutions specializes in radio, microwave, and millimeter wave semiconductor devices. This part belongs to their portfolio of active components used in telecommunications and defense applications. The company focuses on high-performance solutions for data centers and industrial sectors.

Replacement Considerations

No public confirmed substitute part numbers are available.