NPTB00025AB

Overview

The NPTB00025AB is an RF MOSFET GAN device from MACOM Technology Solutions, housed in the AC360B-2 package. It features a rated voltage of 28 V and utilizes chassis mounting for thermal management. This component belongs to the NPTB00025 base product family, serving as a discrete RF power transistor designed for high-frequency applications.

Feature Summary

• Utilizes Gallium Nitride (GAN) technology for enhanced RF performance
• Designed with AC360B-2 packaging for robust structural integrity
• Supports chassis mounting configurations for efficient heat dissipation

Applications

• RF power amplification systems
• Microwave communication infrastructure
• High-frequency signal processing modules

Procurement Notes

Verify the specific suffix 'AB' against official MACOM documentation to confirm compatibility with the AC360B-2 package and 28V rating. Ensure that procurement channels provide original manufacturer components to guarantee electrical parameters match the datasheet specifications for reliable RF operation.

Selection Notes

Select this component when a 28V rated GAN RF MOSFET is required for chassis-mounted applications. Consider the AC360B-2 form factor for integration into systems requiring specific mechanical footprints. Validate that the operating frequency range aligns with the intended RF circuit design requirements.

Part Context

This part is part of the NPTB00025 series, which includes variants such as NPTB00025B and NPTB00025C. The NPTB00025AB specifically denotes the configuration utilizing the AC360B-2 package, distinguishing it from other package options within the same base product line offered by MACOM Technology Solutions.

Replacement Considerations

NPTB00025B and NPTB00025C are related parts within the same base product family. Verify if alternative package types or slight parameter variations in these siblings meet the specific mechanical and electrical constraints of the target application before substitution.