NSS30070MR6T1G

Single Bipolar Transistors Overview

The NSS30070MR6T1G is a PNP bipolar junction transistor (BJT) manufactured by onsemi, designed for surface-mount applications. It features a maximum collector-emitter voltage (VCEO) of 30 V and a continuous collector current (IC) of 700 mA. The device operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 342 mW in the SC-74 package. Key electrical characteristics include a low collector-emitter saturation voltage (VCEsat) of 60 mV at specified conditions, a DC current gain (hFE) minimum of 300, and a transition frequency (fT) of 300 MHz. It is qualified under AEC-Q101 standards for automotive reliability.

Single Bipolar Transistors Feature Summary

• Low saturation voltage design for efficient switching and reduced power loss
• High DC current gain ensuring robust amplification performance
• Automotive-grade qualification compliant with AEC-Q101 standards
• Wide operating temperature range suitable for harsh environments

Single Bipolar Transistors Applications

• Automotive electronic control units requiring reliable PNP switching
• General-purpose low-voltage switching circuits
• Amplifier stages in consumer electronics
• Power management applications with strict thermal constraints

Single Bipolar Transistors Procurement Notes

Verify the specific suffix MR6T1G corresponds to the required tape-and-reel packaging quantity and variant configuration. Confirm that the AEC-Q101 qualification meets your specific automotive grade requirements. Ensure the SC-74 footprint matches your PCB layout guidelines. Check for any recent product change notices regarding material composition or manufacturing site changes before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with high current gain and low saturation voltage is required in a compact surface-mount package. The 30 V rating suits low-voltage logic interfaces. Consider the 342 mW power dissipation limit for thermal management. Compare against alternative BJT packages if space constraints differ. Verify compatibility with the target circuit's voltage and current demands to ensure safe operation margins.

Single Bipolar Transistors Part Context

This part belongs to onsemi's NSS30 series of low VCEsat bipolar transistors. These devices are optimized for applications demanding high efficiency and fast switching speeds. The series offers various configurations including NPN and PNP types in different packages. The NSS30070MR6T1G specifically provides a balance of current handling and gain in a small outline package, fitting into broader power management and signal processing families.

Single Bipolar Transistors Replacement Considerations

Direct substitutes may include other PNP BJTs from onsemi with similar VCEO and IC ratings, such as variants in the NSS30 family. Cross-manufacturer replacements require matching VCEsat, hFE, and package dimensions. Verify thermal resistance and pinout compatibility before substitution. Ensure the replacement also meets AEC-Q101 if automotive use is intended.