NSVF3007SG3T1G

Overview

The NSVF3007SG3T1G is a high-voltage N-channel MOSFET from onsemi, designed for robust power switching applications. It features a 300V drain-source voltage rating and a continuous drain current of 5.2A at 25°C. The device utilizes Super Junction technology to achieve low on-resistance, specifically 0.48Ω at 10V gate drive. Packaged in the compact DPAK-3 surface-mount format, it supports junction temperatures up to 175°C. Key electrical characteristics include a maximum gate threshold voltage of 4V and a typical input capacitance of 1600pF, ensuring efficient control and thermal stability in demanding environments.

Feature Summary

• Super Junction architecture delivers enhanced performance through reduced specific on-resistance compared to conventional planar technologies.
• High avalanche energy capability provides improved ruggedness against transient overvoltage events during operation.
• Fast switching characteristics minimize dynamic power losses, contributing to higher overall system efficiency.

Applications

• Motor control circuits requiring high-voltage switching capabilities
• DC-DC converter topologies for power supply regulation
• Load switching applications in industrial automation systems

Procurement Notes

Verify the complete part number including the suffix T1G to ensure correct tape-and-reel packaging configuration. Confirm RoHS compliance status and manufacturing origin by reviewing the official datasheet documentation prior to procurement. Ensure storage conditions adhere to moisture sensitivity level requirements to maintain device integrity before soldering.

Selection Notes

Select this component when a 300V rating with moderate current handling is required in a surface-mount package. Evaluate the thermal resistance parameters relative to the intended PCB copper area to ensure adequate heat dissipation. Compare the gate charge specifications against the driving circuit capabilities to optimize switching speed and minimize driver power consumption.

Part Context

This device belongs to onsemi's high-voltage MOSFET portfolio, leveraging Super Junction technology for superior efficiency. It serves as a discrete solution for medium-power applications where space constraints necessitate surface-mount packaging while maintaining high voltage blocking capabilities.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the 300V rating, DPAK-3 package outline, and electrical characteristics such as Rds(on) and Qg to maintain circuit performance.