SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi NTD3055AVT4 is an N-channel enhancement mode MOSFET designed for surface-mount applications. It features a maximum drain-source voltage of 60 V and a continuous drain current of 9 A. The device utilizes a DPAK (TO-252) package with three pins. Key electrical parameters include a maximum drain-source on-resistance of 170 mΩ, a typical gate charge of 4.7 nC at 5 V, and a maximum power dissipation of 28.5 W. The component operates within a temperature range of -55 °C to +175 °C.
Verify the specific suffix 'AVT4' against official onsemi documentation to confirm exact electrical characteristics and availability status. Cross-reference datasheets from authorized distributors to ensure compliance with RoHS standards and environmental regulations. Confirm package dimensions and pinout compatibility before integration into PCB layouts.
Select this component for applications requiring robust N-channel performance in a compact SMD form factor. Consider the 170 mΩ on-resistance for efficiency requirements and the 60 V rating for voltage headroom. Evaluate thermal management needs given the 28.5 W power dissipation capability in the TO-252 package.
This part belongs to the NTD3055 series of N-channel MOSFETs from onsemi. It shares similar voltage and current ratings with variants like NTD3055L170T4G but may differ in specific resistance or gate charge specifications. The AVT4 suffix indicates a particular tape-and-reel packaging configuration.
NTD3055L170T4G offers identical 60V/9A ratings and 170 mΩ Rds(on) in the same DPAK package. NTD3055-150T4G provides a lower 150 mΩ Rds(on) option within the same series family.