NTD4809N-35H

Overview

The NTD4809N-35H is an N-channel enhancement mode power MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 35 A when mounted in an IPAK (TO-251) package with through-hole installation. The device exhibits a maximum on-state resistance (Rds(on)) of 25 mΩ at a gate-source voltage (Vgs) of 10 V. It operates within a junction temperature range of -55 °C to +175 °C, with a maximum power dissipation of 32.6 W. The component utilizes silicon technology and includes a single transistor configuration.

Feature Summary

• Enhanced low on-resistance design for reduced conduction losses
• Logic-level gate threshold capability for efficient drive requirements
• High thermal stability supporting operation up to 175 °C junction temperature

Applications

• Low-side switching applications
• DC-DC converter circuits
• General purpose power control

Procurement Notes

Verify the specific suffix '35H' against official onsemi documentation to confirm pinout and electrical specifications match the standard NTD4809N variant. Ensure the selected package type aligns with the required PCB mounting method, as variations exist between surface mount and through-hole configurations for this part family.

Selection Notes

Select this component for designs requiring a 30 V rated N-channel MOSFET with moderate current handling capabilities. Consider the thermal management requirements associated with the IPAK package and the specified Rds(on) values at different gate drive voltages to ensure optimal efficiency in the target application circuit.

Part Context

This part belongs to the NTD series of N-channel power MOSFETs from onsemi, designed for general-purpose switching applications. The series offers a balance of performance and cost-effectiveness, utilizing advanced cell technology to achieve low on-resistance within standard power packages suitable for various industrial and consumer electronics systems.

Replacement Considerations

Cross-reference with other N-channel 30 V MOSFETs in the TO-251/IPAK package if supply constraints exist. Verify that substitute devices meet or exceed the 35 A current rating and 25 mΩ on-resistance specifications to maintain circuit performance integrity.