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NTD4856N-1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 25V 13.3A/89A IPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTD4856N-1G
- Description：MOSFET N-CH 25V 13.3A/89A IPAK
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：13.3A (Ta), 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：27 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2241 pF @ 12 V
- FET Feature：-
- Power Dissipation (Max)：1.33W (Ta), 60W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：IPAK
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Single FETs, MOSFETs datasheet and documents for NTD4856N-1G
Single FETs, MOSFETs Overview
The NTD4856N-1G is a discontinued N-channel power MOSFET manufactured by onsemi. It utilizes neutron transmutation doped (NTD) silicon technology to achieve narrow resistivity ranges and low radial gradients, resulting in consistent electrical characteristics and higher blocking voltage distribution compared to standard float zone silicon. The device is designed for high-power semiconductor applications requiring reliable performance under demanding conditions.
Single FETs, MOSFETs Feature Summary
- Utilizes neutron transmutation doped (NTD) silicon for superior resistivity uniformity
- Provides narrow resistivity range and low radial resistivity gradient
- Delivers desirable distribution of electrical characteristics including turn-on and reverse recovery
- Engineered for higher blocking voltage distribution in high-power applications
Single FETs, MOSFETs Applications
- High-power semiconductor devices requiring stable blocking voltage
- Applications benefiting from improved turn-on characteristics and lower on-state voltage drop
- Systems utilizing NTD silicon advantages for enhanced reliability
Single FETs, MOSFETs Procurement Notes
This component is listed as obsolete or discontinued with no relevant data available through standard channels. Verification of availability requires direct contact with an onsemi customer manager. Do not assume stock or substitute availability without official confirmation. Ensure design-in decisions account for the end-of-life status before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this part only if legacy compatibility with NTD silicon benefits is required. Consider that the device is discontinued; alternative modern N-channel MOSFETs with similar voltage and current ratings should be evaluated for new designs. Verify that the specific NTD silicon advantages align with the application's thermal and electrical requirements.
Single FETs, MOSFETs Part Context
The NTD4856N-1G belongs to onsemi's discrete component portfolio, specifically leveraging NTD silicon technology. This technology addresses resistivity variations common in float zone silicon, offering tighter control over key parameters like blocking voltage and switching times. It represents a specialized solution for high-reliability power electronics.
Single FETs, MOSFETs Replacement Considerations
No public confirmed substitute part numbers are available for this discontinued component. Engineers must evaluate equivalent N-channel MOSFETs based on voltage, current, and package compatibility. Consult onsemi directly for potential obsolescence management options or approved alternatives.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
