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The NTD4865NT4H is a single N-channel enhancement mode MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in a DPAK (TO-252) surface-mount package with three pins. The device features a drain-source breakdown voltage (Vds) of 25 V and a continuous drain current (Id) of 44 A. Its maximum gate-source voltage (Vgs) is rated at 20 V, with a typical on-resistance (Rds On) of 10.9 mΩ. Operating temperatures range from -55 °C to +150 °C, with a power dissipation (Pd) of 1.92 W.
Verify the exact datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the DPAK package dimensions and thermal requirements align with the target PCB layout. Ensure compliance with RoHS directives and check for any specific handling precautions related to the component's sensitivity. Cross-reference part numbers to avoid confusion with similar series variants.
Select this component when a low-voltage, high-current N-channel switch is required in a surface-mount form factor. The 25 V rating suits low-side switching applications where minimal voltage drop is critical. Evaluate the thermal performance within the DPAK package to ensure adequate heat dissipation for the intended load current. Consider the gate drive requirements compatible with the 20 V maximum rating.
This part belongs to the NTD4865N series of power MOSFETs from onsemi. It is designed as a standard product for general-purpose power switching. The series focuses on providing efficient conduction in compact packages suitable for consumer electronics and industrial power supplies.
Check for direct substitutes such as the NTD4865N-1G or NTD4865NT4G, ensuring pinout compatibility and matching electrical ratings. Verify package equivalence between DPAK and TO-252 variants if cross-referencing.