NTE199

Description：TRANS NPN 50V 0.1A TO-92
Series：-

SKU:a07c25389a12 Category: Single Bipolar Transistors Brand: NTE Electronics, Inc

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 50V 0.1A TO-92
Series：-
Mfr：NTE Electronics, Inc
Package：Box
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：125mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：30nA
DC Current Gain (hFE) (Min) @ Ic, Vce：400 @ 2mA, 5V
Power - Max：360 mW
Frequency - Transition：-
Operating Temperature：-55°C ~ 125°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92
Grade：-
Qualification：-

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NTE199

Overview

The NTE199 is a silicon NPN bipolar junction transistor housed in a TO-92 package. It features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 0.1A. The device has a maximum power dissipation rating of 360mW and operates within a junction temperature range of -55°C to 125°C. Designed for small signal applications, it offers high gain and low noise performance suitable for precision circuits.

Feature Summary

Silicon NPN construction optimized for low noise preamplifier applications
High gain characteristics designed for precision circuit requirements
Small signal industrial amplifier suitability with robust thermal handling

Applications

Low noise preamplifier stages
Small signal industrial amplification
Precision general-purpose switching and amplification

Procurement Notes

Verify the specific manufacturer datasheet for absolute maximum ratings and thermal resistance values before integration. Confirm that the TO-92 through-hole mounting type aligns with your PCB layout constraints. Ensure operating conditions remain within the specified -55°C to 125°C junction temperature range to maintain reliability and prevent parameter drift during long-term deployment.

Selection Notes

Select this component when low noise performance is critical for small signal processing tasks. The 50V breakdown voltage and 0.1A current limit define its operational boundaries for general-purpose amplification. Consider the TO-92 package size for space-constrained designs requiring through-hole assembly. Evaluate thermal management requirements against the 360mW dissipation rating for sustained operation.

Part Context

This part belongs to the family of small signal NPN silicon transistors intended for audio and RF preamplification. It serves as a discrete active element for signal conditioning in industrial and consumer electronics. The TO-92 form factor provides a standard mechanical interface for prototyping and production assemblies requiring reliable low-noise amplification capabilities.