NTH4L025N065SC1

Single FETs, MOSFETs Overview

The NTH4L025N065SC1 is a Silicon Carbide (SiC) MOSFET from onsemi's EliteSiC series, housed in a TO-247-4LD package. It features a 650 V drain-to-source voltage rating and supports an operating junction temperature up to 175°C. The device exhibits a typical on-resistance of 19 mΩ at VGS = 18 V and 25 mΩ at VGS = 15 V. Key electrical parameters include a total gate charge of 164 nC and an output capacitance of 278 pF. It offers a continuous drain current of 99 A at TC = 25°C and withstands pulsed currents up to 323 A.

Single FETs, MOSFETs Feature Summary

• Utilizes Silicon Carbide technology for high thermal stability and efficiency
• Features Kelvin source connection for accurate gate drive control
• Demonstrates ultra-low gate charge and low output capacitance for reduced switching losses
• Verified with 100% avalanche testing for robustness under stress conditions

Single FETs, MOSFETs Applications

• Switching Mode Power Supplies (SMPS)
• Solar Inverters
• Uninterruptable Power Supplies (UPS)
• Energy Storage Systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix AYWWZZ corresponds to the required assembly location, year, work week, and lot traceability codes. Confirm compliance with RoHS standards and halide-free status, noting the exemption for lead-free second-level interconnection. Ensure the TO-247-4LD package type matches the thermal and mechanical requirements of the target PCB design before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage SiC performance with low switching losses. The 650 V rating and 175°C junction temperature capability make it suitable for high-efficiency power conversion. Consider the 19 mΩ on-resistance at 18 V gate drive for optimal conduction loss management. Verify that the system can support the recommended -5 V to +18 V gate-to-source voltage operation range for reliable switching behavior.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's EliteSiC family of Silicon Carbide MOSFETs. It utilizes the TO-247-4LD case outline (CASE 340CJ), which includes a dedicated Kelvin source pin to minimize noise coupling during high-speed switching. The device is designed to replace traditional silicon MOSFETs in high-frequency, high-temperature environments where efficiency and thermal management are critical constraints.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the datasheet. Engineers should evaluate alternative SiC MOSFETs based on matching voltage ratings, on-resistance values, and package compatibility. Cross-referencing thermal resistance and gate charge specifications is essential when considering non-onsemi alternatives for direct replacement scenarios.