NTHC5513T1G

FET, MOSFET Arrays Overview

The NTHC5513T1G is a complementary power MOSFET pair from onsemi, integrating an N-channel and a P-channel device within a single ChipFET package. It provides a maximum drain-source voltage of 20 V for both channels. The N-channel transistor supports a continuous drain current of 3.9 A, while the P-channel counterpart handles up to 4.0 A. This dual-transistor configuration is designed for efficient space-constrained applications requiring matched switching characteristics.

FET, MOSFET Arrays Feature Summary

• Integrates complementary N-channel and P-channel MOSFETs into a single compact package
• Optimized for low-profile surface-mount assembly requirements
• Designed for high-efficiency switching in power management circuits

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification stages
• Low-voltage motor control driver circuits
• Power distribution switches in portable electronics

FET, MOSFET Arrays Part Context

This component belongs to onsemi's ChipFET family, which combines discrete transistors to reduce board space and parasitic inductance. The NTHC5513T1G specifically targets applications needing paired N/P-channel devices with matched thermal and electrical performance profiles.

FET, MOSFET Arrays Replacement Considerations

Verify pinout compatibility and thermal resistance values when substituting. Ensure the replacement part maintains the 20 V rating and comparable current handling capabilities for the specific circuit application.