NTHD3100CT1

Description：MOSFET N/P-CH 20V 2.9A CHIPFET
Series：-

SKU:bc5756939e4f Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

NTHD3100CT1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 20V 2.9A CHIPFET. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTHD3100CT1

Description：MOSFET N/P-CH 20V 2.9A CHIPFET
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：2.9A, 3.2A
Rds On (Max) @ Id, Vgs：80mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：165pF @ 10V
Power - Max：1.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SMD, Flat Leads
Supplier Device Package：ChipFET™
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for NTHD3100CT1

NTHD3100CT1

FET, MOSFET Arrays Overview

The NTHD3100CT1 is a complementary MOSFET array featuring an N-Channel and P-Channel device in a ChipFET package. It provides a drain-to-source voltage of 20 V with continuous currents of +3.9 A for the N-Channel and -4.4 A for the P-Channel at short durations. The N-Channel exhibits a maximum on-resistance of 80 mΩ at 4.5 V, while the P-Channel reaches 80 mΩ under similar conditions. Total gate charges are 2.3 nC and 7.4 nC respectively. The component operates within a junction temperature range of -55 °C to 150 °C.

FET, MOSFET Arrays Feature Summary

Complementary N-Channel and P-Channel configuration in a single leadless SMD package
Trench P-Channel technology designed for low on-resistance performance
Low gate charge N-Channel optimized for test switching applications
ChipFET package offers reduced size compared to TSOP-6 and improved thermal characteristics

FET, MOSFET Arrays Applications

DC-DC conversion circuits
Load switch applications requiring level shift
Drive small brushless DC motors
Power management in portable battery-powered products

FET, MOSFET Arrays Procurement Notes

Verify current availability status as the datasheet indicates this specific part number may be discontinued. Confirm if the 'G' suffix variant is required for lead-free compliance. Check for updated ordering information or alternative packages from the manufacturer before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select based on the 20 V breakdown voltage and complementary channel requirements. Ensure the 80 mΩ on-resistance meets the load current needs. Verify that the ChipFET package dimensions fit the PCB layout constraints. Consider the thermal resistance ratings for steady-state operation on FR4 boards.

FET, MOSFET Arrays Part Context

This component belongs to the NTHD3100C series of complementary power MOSFETs manufactured by onsemi. It utilizes the ChipFET/C0116 package style. The series includes variations such as NTHD3100CT1G and NTHD3100CT3.