NTHD3100CT1G

$1.33

Description：MOSFET N/P-CH 20V 2.9A CHIPFET
Series：-

SKU:a605d57d5b90 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

NTHD3100CT1G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 20V 2.9A CHIPFET. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTHD3100CT1G

Description：MOSFET N/P-CH 20V 2.9A CHIPFET
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：2.9A, 3.2A
Rds On (Max) @ Id, Vgs：80mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：165pF @ 10V
Power - Max：1.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SMD, Flat Leads
Supplier Device Package：ChipFET™
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for NTHD3100CT1G

NTHD3100CT1G

FET, MOSFET Arrays Overview

The NTHD3100CT1G is a complementary MOSFET array from onsemi, integrating an N-Channel and a P-Channel enhancement-mode device within a single ChipFET package. The component features a drain-to-source voltage rating of 20 V for both channels. Maximum continuous drain currents are specified at +3.9 A for the N-Channel and -4.4 A for the P-Channel under pulsed conditions (t ≤ 10 s). On-resistance values are typically 58 mΩ for the N-Channel and 64 mΩ for the P-Channel at VGS = ±4.5 V. Total gate charges are 2.3 nC for the N-Channel and 7.4 nC for the P-Channel. The device operates within a junction temperature range of -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

Complementary N-Channel and P-Channel configuration in a leadless SMD package
Trench P-Channel technology designed for low on-resistance
Low gate charge N-Channel optimized for test switching applications
ChipFET package provides reduced size compared to TSOP-6

FET, MOSFET Arrays Applications

DC-DC conversion circuits
Load switch applications requiring level shift
Drive small brushless DC motors
Power management in portable battery-powered products

FET, MOSFET Arrays Procurement Notes

Verify current availability status as the NTHD3100CT1G is listed as discontinued in official documentation. Confirm if alternative packages or updated series replacements are supported by the manufacturer before finalizing design-in decisions.

FET, MOSFET Arrays Selection Notes

Select this component for space-constrained designs requiring dual-channel switching with asymmetric current capabilities. Ensure gate drive voltages align with the specified thresholds and that thermal dissipation requirements fit within the 1.1 W steady-state power limit.

FET, MOSFET Arrays Part Context

This part belongs to the NTHD3100C series of complementary MOSFETs manufactured by onsemi. It utilizes the ChipFET form factor, which is noted for being smaller than traditional TSOP-6 packages while maintaining robust thermal characteristics suitable for surface-mount assembly.