NTHD3100CT3

Description：MOSFET N/P-CH 20V 2.9A CHIPFET
Series：-

SKU:417b8394493f Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

NTHD3100CT3 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 20V 2.9A CHIPFET. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTHD3100CT3

Description：MOSFET N/P-CH 20V 2.9A CHIPFET
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：2.9A, 3.2A
Rds On (Max) @ Id, Vgs：80mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：165pF @ 10V
Power - Max：1.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SMD, Flat Leads
Supplier Device Package：ChipFET™
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for NTHD3100CT3

NTHD3100CT3

FET, MOSFET Arrays Overview

The NTHD3100CT3 is a complementary MOSFET pair in an 8-lead ChipFET package. It integrates one N-channel and one P-channel enhancement-mode device. The N-channel unit supports a drain-source voltage of 20 V, with continuous currents of 2.9 A at 25 °C and 3.9 A pulsed. Its on-resistance is 58 mΩ at 4.5 V gate drive. The P-channel unit handles -20 V, with steady-state current of -3.2 A and -4.4 A pulsed. On-resistance is 64 mΩ at -4.5 V. Total gate charges are 2.3 nC for the N-channel and 7.4 nC for the P-channel. Operating temperature ranges from -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

Complementary N-Channel and P-Channel MOSFET integration
Small Size, 40% Smaller than TSOP-6 Package
Leadless SMD Package Provides Great Thermal Characteristics
Trench P-Channel for Low On Resistance
Low Gate Charge N-Channel for Test Switching

FET, MOSFET Arrays Applications

DC-DC Conversion Circuits
Load Switch Applications Requiring Level Shift
Drive Small Brushless DC Motors
Ideal for Power Management Applications in Portable, Battery Powered Products

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized channels. Confirm RoHS compliance status as required by project specifications. Ensure proper handling procedures are followed during assembly to maintain device integrity and performance reliability throughout the operational lifecycle.

FET, MOSFET Arrays Selection Notes

Evaluate thermal resistance requirements against system cooling capabilities. Verify that gate drive voltages align with specified thresholds for optimal switching performance. Consider package dimensions and pad layout compatibility with existing PCB designs to ensure reliable soldering and mechanical stability.

FET, MOSFET Arrays Part Context

This component belongs to the NTHD3100C series of complementary power MOSFETs manufactured by onsemi. It utilizes the ChipFET leadless surface-mount technology designed for high-density applications. The series provides integrated dual-channel solutions for efficient power management in compact electronic devices.